Three-dimensional dopant characterization of actual metal-oxide- semiconductor devices of 65nm node by atom probe tomography

Koji Inoue, Hisashi Takamizawa, Yasuo Shimizu, Fumiko Yano, Takeshi Toyama, Akio Nishida, Tohru Mogami, Katsuyuki Kitamoto, Takahiro Miyagi, Jun Kato, Seishi Akahori, Noriyuki Okada, Mikio Kato, Hiroshi Uchida, Yasuyoshi Nagai

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

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