TY - JOUR
T1 - Three-dimensional elemental analysis of commercial 45nm Node Device with High-k/Metal gate stack by atom probe tomography
AU - Inoue, Koji
AU - Takamizawa, Hisashi
AU - Kitamoto, Katsuyuki
AU - Kato, Jun
AU - Miyagi, Takahiro
AU - Nakagawa, Yoshitsugu
AU - Kawasaki, Naohiko
AU - Sugiyama, Naoyuki
AU - Hashimoto, Hideki
AU - Shimizu, Yasuo
AU - Toyama, Takeshi
AU - Nagai, Yasuyoshi
AU - Karen, Akiya
PY - 2011/11
Y1 - 2011/11
N2 - Laser-assisted atom probe tomography (APT) was successfully applied to analyze the elemental distributions in a high-k/metal gate stack of a commercially available 45nm node real device. APT revealed the multilayer structure of the high-k/metal gate stack with nearly atomic-scale resolution, and successfully detected small amounts of Zr in the thin layer of high-k HfO2 dielectrics and H in the Ti layer of the metal gate. The present results demonstrate the usefulness of APT as a tool of elemental analysis in nanoscale multilayer device structures.
AB - Laser-assisted atom probe tomography (APT) was successfully applied to analyze the elemental distributions in a high-k/metal gate stack of a commercially available 45nm node real device. APT revealed the multilayer structure of the high-k/metal gate stack with nearly atomic-scale resolution, and successfully detected small amounts of Zr in the thin layer of high-k HfO2 dielectrics and H in the Ti layer of the metal gate. The present results demonstrate the usefulness of APT as a tool of elemental analysis in nanoscale multilayer device structures.
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U2 - 10.1143/APEX.4.116601
DO - 10.1143/APEX.4.116601
M3 - Article
AN - SCOPUS:81055154900
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 11
M1 - 116601
ER -