@article{4eee9670994f47b9a2784a8ef58a2ee5,
title = "Three-dimensional evaluation of gettering ability of Σ 3 {111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy",
abstract = "Three-dimensional distribution of impurities (boron, phosphorus, oxygen, and copper) at Σ 3 { 111 } grain boundaries was determined in a Czochralski-grown silicon single crystal by laser-assisted atom probe tomography (APT) combined with transmission electron microscopy, with a detection limit as low as the order of 0.001 at. %. The location of a boundary was determined by APT even when the boundary was not contaminated. Unlike the boundaries in multicrystalline silicon grown by the casting method, the impurities did not segregate at the boundaries even when the impurity concentrations were high. The gettering ability of the boundaries was discussed.",
author = "Yutaka Ohno and Kaihei Inoue and Yuki Tokumoto and Kentaro Kutsukake and Ichiro Yonenaga and Naoki Ebisawa and Hisashi Takamizawa and Yasuo Shimizu and Koji Inoue and Yasuyoshi Nagai and Hideto Yoshida and Seiji Takeda",
note = "Funding Information: A part of this work was supported by the Integrated Materials Research Center for a Low-Carbon Society, IMR, Tohoku University (2012–2013) and by a Grant-in-Aid for Challenging Exploratory Research, No. 23656380 (2011–2013), from the Ministry of Education, Culture, Sports, Science, and Technology, Japan. HAADF work was performed under the Cooperative Research Program of Network Joint Research Center for Materials and Devices at ISIR, Osaka University. APT was performed under the Inter-University Cooperative Research Program at the Oarai Center, IMR, Tohoku University.",
year = "2013",
month = sep,
day = "2",
doi = "10.1063/1.4820140",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "10",
}