TY - GEN
T1 - Three-dimensional integration technology for sensor application using 5-μm-pitch au cone bump connections
AU - Motoyoshi, Makoto
AU - Yanagimura, Kohki
AU - Takanohashi, Junichi
AU - Murugesan, Mariappan
AU - Aoyagi, Masahiro
AU - Koyanagi, Mitsumasa
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/15
Y1 - 2015/7/15
N2 - This paper presents the experimental results of a pixel detector device fabricated with 3-μmφ gold cone bump connections using adhesive injections. The as-deposited cone bump consists of gold nanoparticles and is easier to deform than plating gold. Consequently, the collapsibility of the gold cone bump allows for low-stress bonding, resulting in a compliant and reliable junction. The size of the bump is determined by photoresist patterning, and its connections do not protrude significantly during junction formation, in contrast with melting-type bump connections. In addition, the shrink ratio of the volume is larger than that of the surface area. The bump resistance of an easily oxidized metal with a diameter of a few microns is affected by the bonding atmosphere. In contrast, bonding with a micro gold cone bump does not adversely affect the electrical characteristics because gold is an oxidation-resistant material. The resistance per bump is approximately 6 ω with a robust junction formed. The influence of the stress caused by the bump junction on the MOS characteristics is also investigated.
AB - This paper presents the experimental results of a pixel detector device fabricated with 3-μmφ gold cone bump connections using adhesive injections. The as-deposited cone bump consists of gold nanoparticles and is easier to deform than plating gold. Consequently, the collapsibility of the gold cone bump allows for low-stress bonding, resulting in a compliant and reliable junction. The size of the bump is determined by photoresist patterning, and its connections do not protrude significantly during junction formation, in contrast with melting-type bump connections. In addition, the shrink ratio of the volume is larger than that of the surface area. The bump resistance of an easily oxidized metal with a diameter of a few microns is affected by the bonding atmosphere. In contrast, bonding with a micro gold cone bump does not adversely affect the electrical characteristics because gold is an oxidation-resistant material. The resistance per bump is approximately 6 ω with a robust junction formed. The influence of the stress caused by the bump junction on the MOS characteristics is also investigated.
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U2 - 10.1109/ECTC.2015.7159775
DO - 10.1109/ECTC.2015.7159775
M3 - Conference contribution
AN - SCOPUS:84942103497
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1365
EP - 1370
BT - 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
Y2 - 26 May 2015 through 29 May 2015
ER -