TY - GEN
T1 - Three-step room temperature wet cleaning process for silicon substrate
AU - Hasebe, Rui
AU - Teramoto, Akinobu
AU - Suwa, Tomoyuki
AU - Kuroda, Rihito
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2009
Y1 - 2009
N2 - With a progress of device dimension miniaturization, an ultraclean wafer surface is continuously increasing its importance crucial for high quality processing in Silicon Technologies [1]-[8]. Cleaning of silicon wafer surface has been accomplished by RCA wet cleaning in the past [9], where there exists high temperature processes consisting of H2SO4/H2O2/H2O, NH4OH/H2O2/H2O and HCl/H2O2/H2O treatments. Thus, RCA cleaning requires a large number of processing steps, resulting in the consumption of a huge volume of liquid chemicals and UPW, and simultaneously consuming a large volume of clean air exhaust to suppress chemical vapor from getting into the clean room. Moreover, RCA cleaning is used at high temperature and contain alkali solutions, which increase the roughness of the silicon wafer surface [10].
AB - With a progress of device dimension miniaturization, an ultraclean wafer surface is continuously increasing its importance crucial for high quality processing in Silicon Technologies [1]-[8]. Cleaning of silicon wafer surface has been accomplished by RCA wet cleaning in the past [9], where there exists high temperature processes consisting of H2SO4/H2O2/H2O, NH4OH/H2O2/H2O and HCl/H2O2/H2O treatments. Thus, RCA cleaning requires a large number of processing steps, resulting in the consumption of a huge volume of liquid chemicals and UPW, and simultaneously consuming a large volume of clean air exhaust to suppress chemical vapor from getting into the clean room. Moreover, RCA cleaning is used at high temperature and contain alkali solutions, which increase the roughness of the silicon wafer surface [10].
KW - Alkali free
KW - Cleaning
KW - Room temperature
KW - TDS-APIMS
UR - http://www.scopus.com/inward/record.url?scp=75849137597&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=75849137597&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.145-146.189
DO - 10.4028/www.scientific.net/SSP.145-146.189
M3 - Conference contribution
AN - SCOPUS:75849137597
SN - 3908451647
SN - 9783908451648
T3 - Solid State Phenomena
SP - 189
EP - 192
BT - Ultra Clean Processing of Semiconductor Surfaces IX
PB - Trans Tech Publications Ltd
T2 - 9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
Y2 - 22 September 2008 through 24 September 2008
ER -