Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device

Yahya Moubarak Meziani; Mitsuhiro Hanabe; Taiichi Otsuji; Eiichi Sano

doi:10.1143/JJAP.46.2409

Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device

Yahya Moubarak Meziani, Mitsuhiro Hanabe, Taiichi Otsuji, Eiichi Sano

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The new doubly interdigitated grating gate high-electron-mobility transistor (HEMT) has been subjected at room temperature to a 1.5 μm cw laser beam. The observed photoresponse shows a threshold behavior as a function of drain-to-source bias for different gate voltages. The result was interpreted as a clear signature of the self-oscillation of plasma waves.

Original language	English
Pages (from-to)	2409-2412
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2409
Publication status	Published - 2007 Apr 24

Keywords

Grating gate
HEMT
Photomixer
Plasma wave
Terahertz radiations

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.46.2409

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Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device. / Meziani, Yahya Moubarak; Hanabe, Mitsuhiro; Otsuji, Taiichi et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, 24.04.2007, p. 2409-2412.

Research output: Contribution to journal › Article › peer-review

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Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device

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Keywords

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