Through-silicon photonic via and unidirectional coupler for high-speed data transmission in optoelectronic three-dimensional LSI

Akihiro Noriki; Kangwook Lee; Jicheol Bea; Takafumi Fukushima; Tetsu Tanaka; Mitsumasa Koyanagi

doi:10.1109/LED.2011.2174608

Through-silicon photonic via and unidirectional coupler for high-speed data transmission in optoelectronic three-dimensional LSI

Akihiro Noriki, Kangwook Lee, Jicheol Bea, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

Tohoku University

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We develop Si-core through-silicon photonic via (TSPV) and unidirectional coupler for low-loss and high-speed data transmission in an optoelectronic 3-D LSI. The TSPVs, comprising a Si-core and SiO ₂ cladding, were fabricated simultaneously with Cu TSVs. The characteristics of light confinement of the TSPV were measured using a near-field pattern measurement. The spot light area was well confined within the TSPV without interference from the lights. The optical intensity that passed through the TSPV was 20% higher than that which passed through the Si substrate. The unidirectional optical coupler with two mirrors showed higher coupling efficiency. Laser light can be efficiently propagated to a planar Si waveguide through the TSPV and the unidirectional coupler.

Original language	English
Article number	6101553
Pages (from-to)	221-223
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/LED.2011.2174608
Publication status	Published - 2012 Feb

Keywords

Coupling efficiency
near-field pattern (NFP)
optical coupler
optoelectronic 3-D LSI
through-silicon photonic via (TSPV)

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10.1109/LED.2011.2174608

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title = "Through-silicon photonic via and unidirectional coupler for high-speed data transmission in optoelectronic three-dimensional LSI",

abstract = "We develop Si-core through-silicon photonic via (TSPV) and unidirectional coupler for low-loss and high-speed data transmission in an optoelectronic 3-D LSI. The TSPVs, comprising a Si-core and SiO 2 cladding, were fabricated simultaneously with Cu TSVs. The characteristics of light confinement of the TSPV were measured using a near-field pattern measurement. The spot light area was well confined within the TSPV without interference from the lights. The optical intensity that passed through the TSPV was 20% higher than that which passed through the Si substrate. The unidirectional optical coupler with two mirrors showed higher coupling efficiency. Laser light can be efficiently propagated to a planar Si waveguide through the TSPV and the unidirectional coupler.",

keywords = "Coupling efficiency, near-field pattern (NFP), optical coupler, optoelectronic 3-D LSI, through-silicon photonic via (TSPV)",

author = "Akihiro Noriki and Kangwook Lee and Jicheol Bea and Takafumi Fukushima and Tetsu Tanaka and Mitsumasa Koyanagi",

note = "Funding Information: Manuscript received October 12, 2011; revised October 27, 2011; accepted October 29, 2011. Date of publication December 12, 2011; date of current version January 27, 2012. This work was supported by the Grant-in-Aid for Scientific Research (S), Japan Society for the Promotion of Science, under Grant 21226009. The review of this letter was arranged by Editor P. K.-L. Yu.",

year = "2012",

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doi = "10.1109/LED.2011.2174608",

language = "English",

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AU - Fukushima, Takafumi

AU - Tanaka, Tetsu

AU - Koyanagi, Mitsumasa

N1 - Funding Information: Manuscript received October 12, 2011; revised October 27, 2011; accepted October 29, 2011. Date of publication December 12, 2011; date of current version January 27, 2012. This work was supported by the Grant-in-Aid for Scientific Research (S), Japan Society for the Promotion of Science, under Grant 21226009. The review of this letter was arranged by Editor P. K.-L. Yu.

PY - 2012/2

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N2 - We develop Si-core through-silicon photonic via (TSPV) and unidirectional coupler for low-loss and high-speed data transmission in an optoelectronic 3-D LSI. The TSPVs, comprising a Si-core and SiO 2 cladding, were fabricated simultaneously with Cu TSVs. The characteristics of light confinement of the TSPV were measured using a near-field pattern measurement. The spot light area was well confined within the TSPV without interference from the lights. The optical intensity that passed through the TSPV was 20% higher than that which passed through the Si substrate. The unidirectional optical coupler with two mirrors showed higher coupling efficiency. Laser light can be efficiently propagated to a planar Si waveguide through the TSPV and the unidirectional coupler.

AB - We develop Si-core through-silicon photonic via (TSPV) and unidirectional coupler for low-loss and high-speed data transmission in an optoelectronic 3-D LSI. The TSPVs, comprising a Si-core and SiO 2 cladding, were fabricated simultaneously with Cu TSVs. The characteristics of light confinement of the TSPV were measured using a near-field pattern measurement. The spot light area was well confined within the TSPV without interference from the lights. The optical intensity that passed through the TSPV was 20% higher than that which passed through the Si substrate. The unidirectional optical coupler with two mirrors showed higher coupling efficiency. Laser light can be efficiently propagated to a planar Si waveguide through the TSPV and the unidirectional coupler.

KW - Coupling efficiency

KW - near-field pattern (NFP)

KW - optical coupler

KW - optoelectronic 3-D LSI

KW - through-silicon photonic via (TSPV)

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Through-silicon photonic via and unidirectional coupler for high-speed data transmission in optoelectronic three-dimensional LSI

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Keywords

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