THz double-grating gate transistor detectors in high magnetic fields

D. But, N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, T. Watanabe, Y. Tanimoto, S. Boubanga Tombet, T. Otsuji

Research output: Contribution to journalArticlepeer-review


Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.

Original languageEnglish
Pages (from-to)1080-1082
Number of pages3
JournalActa Physica Polonica A
Issue number6
Publication statusPublished - 2012 Dec


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