TY - JOUR
T1 - THz double-grating gate transistor detectors in high magnetic fields
AU - But, D.
AU - Dyakonova, N.
AU - Coquillat, D.
AU - Teppe, F.
AU - Knap, W.
AU - Watanabe, T.
AU - Tanimoto, Y.
AU - Boubanga Tombet, S.
AU - Otsuji, T.
PY - 2012/12
Y1 - 2012/12
N2 - Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
AB - Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
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U2 - 10.12693/APhysPolA.122.1080
DO - 10.12693/APhysPolA.122.1080
M3 - Article
AN - SCOPUS:84870477051
SN - 0587-4246
VL - 122
SP - 1080
EP - 1082
JO - Acta Physica Polonica A
JF - Acta Physica Polonica A
IS - 6
ER -