TY - GEN
T1 - TiC films formed by multi-stacking process for diamond contact metal electrodes
AU - Tanaka, Y.
AU - Kakushima, K.
AU - Ahmet, P.
AU - Kataoka, Y.
AU - Tsutsui, K.
AU - Nishiyama, A.
AU - Sugii, N.
AU - Natori, K.
AU - Hattori, T.
AU - Yamasaki, S.
AU - Iwai, H.
PY - 2013
Y1 - 2013
N2 - TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.
AB - TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.
UR - http://www.scopus.com/inward/record.url?scp=84885706480&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885706480&partnerID=8YFLogxK
U2 - 10.1149/05006.0335ecst
DO - 10.1149/05006.0335ecst
M3 - Conference contribution
AN - SCOPUS:84885706480
SN - 9781607683544
T3 - ECS Transactions
SP - 335
EP - 340
BT - Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
PB - Electrochemical Society Inc.
T2 - Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Y2 - 7 October 2012 through 12 October 2012
ER -