TY - JOUR
T1 - Tight-binding approach to initial stage of the graphitization process on a vicinal SiC surface
AU - Inoue, Masato
AU - Kangawa, Yoshihiro
AU - Wakabayashi, Katsunori
AU - Kageshima, Hiroyuki
AU - Kakimoto, Koichi
PY - 2011/3
Y1 - 2011/3
N2 - We study the process of growth of graphene by the SiC surface decomposition method to improve the technique of growing graphene. In thisstudy, the initial stage of the graphitization process on a periodically faceted SiC surface is investigated by the Naval Research Laboratory tightbinding approach. The results suggest that the decomposition of the SiC surface started by the desorption of Si atoms at the step edge. It is alsofound that released C atoms are trapped at the step-edge sites and that neighboring Si atoms are subsequently desorbed. These results suggest that graphene nucleation on the SiC surface proceeds in a negative step-flow mode.
AB - We study the process of growth of graphene by the SiC surface decomposition method to improve the technique of growing graphene. In thisstudy, the initial stage of the graphitization process on a periodically faceted SiC surface is investigated by the Naval Research Laboratory tightbinding approach. The results suggest that the decomposition of the SiC surface started by the desorption of Si atoms at the step edge. It is alsofound that released C atoms are trapped at the step-edge sites and that neighboring Si atoms are subsequently desorbed. These results suggest that graphene nucleation on the SiC surface proceeds in a negative step-flow mode.
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U2 - 10.1143/JJAP.50.038003
DO - 10.1143/JJAP.50.038003
M3 - Article
AN - SCOPUS:79953079754
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 3
M1 - 038003
ER -