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Tight distribution of dielectric characteristics of HfSiON in metal gate devices
R. Hasunuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, K. Yamabe
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
1
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(Scopus)