TY - JOUR
T1 - Time and spatial evolution of spin-orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes
AU - Zhang, Chaoliang
AU - Fukami, Shunsuke
AU - Gupta, Samik Dutta
AU - Sato, Hideo
AU - Ohno, Hideo
N1 - Funding Information:
The authors thank T. Dohi for fruitful discussion and C. Igarashi, T. Hirata, H. Iwanuma, Y. Kawato, and K. Goto for technical support. This work was supported by the R&D project for ICT Key Technology of MEXT, the ImPACT Program of CSTI, JST-OPERA, JSPS KAKENHI Grant Number 17H06093, and RIEC Cooperative Research Projects.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/4
Y1 - 2018/4
N2 - We study spin-orbit torque (SOT) switching in W/CoFeB/MgO structures with various dot sizes (120-3500 nm) using pulsed current of various widths τ (800 ps-100 ms) to examine the time and spatial evolution of magnetization switching. We show that the switching behavior and the resultant threshold switching current density Jth strongly depend on device size and pulse width. The switching mode in a 3500nm dot device changes from probabilistic switching to reproducible partial switching as τ decreases. At τ = 800 ps, Jth becomes more than 3 times larger than that in the long-pulse regime. A decrease in dot size to 700nm does not significantly change the switching characteristics, suggesting that domain-wall propagation among the nucleated multiple domains governs switching. In contrast, devices with further reduced size (120 nm) show normal full switching with increasing probability with current and insignificant dependence of Jth on τ, indicating that nucleation governs switching.
AB - We study spin-orbit torque (SOT) switching in W/CoFeB/MgO structures with various dot sizes (120-3500 nm) using pulsed current of various widths τ (800 ps-100 ms) to examine the time and spatial evolution of magnetization switching. We show that the switching behavior and the resultant threshold switching current density Jth strongly depend on device size and pulse width. The switching mode in a 3500nm dot device changes from probabilistic switching to reproducible partial switching as τ decreases. At τ = 800 ps, Jth becomes more than 3 times larger than that in the long-pulse regime. A decrease in dot size to 700nm does not significantly change the switching characteristics, suggesting that domain-wall propagation among the nucleated multiple domains governs switching. In contrast, devices with further reduced size (120 nm) show normal full switching with increasing probability with current and insignificant dependence of Jth on τ, indicating that nucleation governs switching.
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U2 - 10.7567/JJAP.57.04FN02
DO - 10.7567/JJAP.57.04FN02
M3 - Article
AN - SCOPUS:85044449904
SN - 0021-4922
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4
M1 - 04FN02
ER -