Nitride semiconductors are expected for the working electrodes of photoelectrochemical water splitting due to the chemical stability and band-gap configuration. The p-type nitrides are stable under photoelectrochemical conditions but the efficiency of light to hydrogen energy is low. The n-type nitrides have relatively high energy-conversion especially for the quantum efficiency, but the photoelectrochemical reaction is not stable because of the anodic photocorrosion. In this article, the relationships between the characteristics of n-type GaN and the photocurrent stability are discussed. The amount of Si doping was clarified to relate to the stability. The suitable properties for stable photocurrent were different from those for high energy-conversion efficiency at initial stage.
|Number of pages
|Physica Status Solidi (C) Current Topics in Solid State Physics
|Published - 2011 Jul
- Anodic oxidation
- Water reduction