Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

R. Yokoyama; T. Nakamura; W. Sugimura; T. Ono; T. Fujiwara; K. Kakimoto

doi:10.1016/j.jcrysgro.2019.04.023

Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

R. Yokoyama, T. Nakamura, W. Sugimura, T. Ono, T. Fujiwara, K. Kakimoto

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The time-dependent behavior of the silicon melt flow in the industrial scaled 300-mm diameter silicon Czochralski growth with a transverse magnetic field was investigated by both the experiment and numerical simulation. The measured temperatures at multiple positions in the melt showed oscillation with the same period but different amplitudes. The calculated results by the fully three-dimensional numerical simulation represented the measurement results and provided a qualitative explanation to this phenomenon. The periodic change of melt flow pattern occurred via the generating, descending, and vanishing of the cold plume. This behavior was driven by the buoyancy, which was similar to the flow under the non-magnetic field reported by Ozoe and Sung.

Original language	English
Pages (from-to)	77-83
Number of pages	7
Journal	Journal of Crystal Growth
Volume	519
DOIs	https://doi.org/10.1016/j.jcrysgro.2019.04.023
Publication status	Published - 2019 Aug 1
Externally published	Yes

Keywords

A1. Computer simulation
A1. Convection
A2. Magnetic field-assisted Czochralski method
B2. Semiconducting silicon

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2019.04.023

Cite this

@article{a46783e5cd0b4889829429c57bd8fe76,

title = "Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field",

abstract = "The time-dependent behavior of the silicon melt flow in the industrial scaled 300-mm diameter silicon Czochralski growth with a transverse magnetic field was investigated by both the experiment and numerical simulation. The measured temperatures at multiple positions in the melt showed oscillation with the same period but different amplitudes. The calculated results by the fully three-dimensional numerical simulation represented the measurement results and provided a qualitative explanation to this phenomenon. The periodic change of melt flow pattern occurred via the generating, descending, and vanishing of the cold plume. This behavior was driven by the buoyancy, which was similar to the flow under the non-magnetic field reported by Ozoe and Sung.",

keywords = "A1. Computer simulation, A1. Convection, A2. Magnetic field-assisted Czochralski method, B2. Semiconducting silicon",

author = "R. Yokoyama and T. Nakamura and W. Sugimura and T. Ono and T. Fujiwara and K. Kakimoto",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = aug,

day = "1",

doi = "10.1016/j.jcrysgro.2019.04.023",

language = "English",

volume = "519",

pages = "77--83",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

AU - Yokoyama, R.

AU - Nakamura, T.

AU - Sugimura, W.

AU - Ono, T.

AU - Fujiwara, T.

AU - Kakimoto, K.

PY - 2019/8/1

Y1 - 2019/8/1

N2 - The time-dependent behavior of the silicon melt flow in the industrial scaled 300-mm diameter silicon Czochralski growth with a transverse magnetic field was investigated by both the experiment and numerical simulation. The measured temperatures at multiple positions in the melt showed oscillation with the same period but different amplitudes. The calculated results by the fully three-dimensional numerical simulation represented the measurement results and provided a qualitative explanation to this phenomenon. The periodic change of melt flow pattern occurred via the generating, descending, and vanishing of the cold plume. This behavior was driven by the buoyancy, which was similar to the flow under the non-magnetic field reported by Ozoe and Sung.

AB - The time-dependent behavior of the silicon melt flow in the industrial scaled 300-mm diameter silicon Czochralski growth with a transverse magnetic field was investigated by both the experiment and numerical simulation. The measured temperatures at multiple positions in the melt showed oscillation with the same period but different amplitudes. The calculated results by the fully three-dimensional numerical simulation represented the measurement results and provided a qualitative explanation to this phenomenon. The periodic change of melt flow pattern occurred via the generating, descending, and vanishing of the cold plume. This behavior was driven by the buoyancy, which was similar to the flow under the non-magnetic field reported by Ozoe and Sung.

KW - A1. Computer simulation

KW - A1. Convection

KW - A2. Magnetic field-assisted Czochralski method

KW - B2. Semiconducting silicon

UR - http://www.scopus.com/inward/record.url?scp=85065585254&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065585254&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2019.04.023

DO - 10.1016/j.jcrysgro.2019.04.023

M3 - Article

AN - SCOPUS:85065585254

SN - 0022-0248

VL - 519

SP - 77

EP - 83

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this