Time-dependent reliability of the interface between A-C:F and inorganic dielectrics

Kazuhiko Endo, Keisuke Shinoda, Toru Tatsumi, Yoshihisa Matsubara, Manabu Iguchi, Tadahiko Horiuchi

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


We have investigated the time dependent reliability of a-C:F films, and found that SiO2 or SiN cover layers on a-C:F films peeled off partially after about a week when the a-C:F film was grown from C4F8 and annealed in N2 or grown from C4F8+CH4. The interfaces between a-C:F and SiN have a mixing layer indicating a radical reaction at the interface. An a-C:F film grown from C4F8+CH4 has greater water-absorption than a film grown from C4F8. Thus, hydrolysis and radical formation after annealing may cause degradation of the interface. We found that hydrogen annealing effectively decreases the dielectric constant and suppresses such time-dependent degradation.

Original languageEnglish
Pages (from-to)365-370
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 17


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