Time-dependent reliability of the interface between A-C:F and inorganic dielectrics

Kazuhiko Endo; Keisuke Shinoda; Toru Tatsumi; Yoshihisa Matsubara; Manabu Iguchi; Tadahiko Horiuchi

doi:10.1557/proc-511-365

Time-dependent reliability of the interface between A-C:F and inorganic dielectrics

Kazuhiko Endo, Keisuke Shinoda, Toru Tatsumi, Yoshihisa Matsubara, Manabu Iguchi, Tadahiko Horiuchi

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

NEC Corporation

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We have investigated the time dependent reliability of a-C:F films, and found that SiO₂ or SiN cover layers on a-C:F films peeled off partially after about a week when the a-C:F film was grown from C₄F₈ and annealed in N₂ or grown from C₄F₈+CH₄. The interfaces between a-C:F and SiN have a mixing layer indicating a radical reaction at the interface. An a-C:F film grown from C₄F₈+CH₄ has greater water-absorption than a film grown from C₄F₈. Thus, hydrolysis and radical formation after annealing may cause degradation of the interface. We found that hydrogen annealing effectively decreases the dielectric constant and suppresses such time-dependent degradation.

Original language	English
Pages (from-to)	365-370
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	511
DOIs	https://doi.org/10.1557/proc-511-365
Publication status	Published - 1998
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: 1998 Apr 13 → 1998 Apr 17

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title = "Time-dependent reliability of the interface between A-C:F and inorganic dielectrics",

abstract = "We have investigated the time dependent reliability of a-C:F films, and found that SiO2 or SiN cover layers on a-C:F films peeled off partially after about a week when the a-C:F film was grown from C4F8 and annealed in N2 or grown from C4F8+CH4. The interfaces between a-C:F and SiN have a mixing layer indicating a radical reaction at the interface. An a-C:F film grown from C4F8+CH4 has greater water-absorption than a film grown from C4F8. Thus, hydrolysis and radical formation after annealing may cause degradation of the interface. We found that hydrogen annealing effectively decreases the dielectric constant and suppresses such time-dependent degradation.",

author = "Kazuhiko Endo and Keisuke Shinoda and Toru Tatsumi and Yoshihisa Matsubara and Manabu Iguchi and Tadahiko Horiuchi",

year = "1998",

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pages = "365--370",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 13-04-1998 Through 17-04-1998",

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T1 - Time-dependent reliability of the interface between A-C:F and inorganic dielectrics

AU - Endo, Kazuhiko

AU - Shinoda, Keisuke

AU - Tatsumi, Toru

AU - Matsubara, Yoshihisa

AU - Iguchi, Manabu

AU - Horiuchi, Tadahiko

PY - 1998

Y1 - 1998

N2 - We have investigated the time dependent reliability of a-C:F films, and found that SiO2 or SiN cover layers on a-C:F films peeled off partially after about a week when the a-C:F film was grown from C4F8 and annealed in N2 or grown from C4F8+CH4. The interfaces between a-C:F and SiN have a mixing layer indicating a radical reaction at the interface. An a-C:F film grown from C4F8+CH4 has greater water-absorption than a film grown from C4F8. Thus, hydrolysis and radical formation after annealing may cause degradation of the interface. We found that hydrogen annealing effectively decreases the dielectric constant and suppresses such time-dependent degradation.

AB - We have investigated the time dependent reliability of a-C:F films, and found that SiO2 or SiN cover layers on a-C:F films peeled off partially after about a week when the a-C:F film was grown from C4F8 and annealed in N2 or grown from C4F8+CH4. The interfaces between a-C:F and SiN have a mixing layer indicating a radical reaction at the interface. An a-C:F film grown from C4F8+CH4 has greater water-absorption than a film grown from C4F8. Thus, hydrolysis and radical formation after annealing may cause degradation of the interface. We found that hydrogen annealing effectively decreases the dielectric constant and suppresses such time-dependent degradation.

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JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

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Time-dependent reliability of the interface between A-C:F and inorganic dielectrics

Abstract

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