TY - JOUR
T1 - Time-resolved photoluminescence of ZnCdSe single quantum dots
AU - Zhang, B. P.
AU - Li, Y. Q.
AU - Yasuda, T.
AU - Segawa, Y.
AU - Edamatsu, K.
AU - Itoh, T.
PY - 2000/6/2
Y1 - 2000/6/2
N2 - Time-resolved photoluminescence study is carried out on ZnCdSe quantum dots (QDs) that are spontaneously formed on cleavage-induced fresh ZnSe (110) surface. Both rise and decay times show dependence on QD sizes. The size dependence of rise time is explained by the carrier capture from the ZnSe barrier into the QDs, which is determined by the overlap between the wave functions of the QD state and the barrier state. On the other hand, the decay time is interpreted by taking into account the electron-hole separation and the overlap between the wave functions of the electrons and the holes.
AB - Time-resolved photoluminescence study is carried out on ZnCdSe quantum dots (QDs) that are spontaneously formed on cleavage-induced fresh ZnSe (110) surface. Both rise and decay times show dependence on QD sizes. The size dependence of rise time is explained by the carrier capture from the ZnSe barrier into the QDs, which is determined by the overlap between the wave functions of the QD state and the barrier state. On the other hand, the decay time is interpreted by taking into account the electron-hole separation and the overlap between the wave functions of the electrons and the holes.
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U2 - 10.1016/S0022-0248(00)00222-0
DO - 10.1016/S0022-0248(00)00222-0
M3 - Conference article
AN - SCOPUS:0033688020
SN - 0022-0248
VL - 214
SP - 765
EP - 769
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - The 9th International Conference on II-VI Compounds
Y2 - 1 November 1999 through 5 November 1999
ER -