Ti1-xCoxO2-δ AlOxFe 0.1Co0.9 magnetic tunnel junctions with varied AlO x thickness

H. Toyosaki; T. Fukumura; K. Ueno; M. Nakano; M. Kawasaki

doi:10.1063/1.2163829

Ti_1-xCo_xO_2-δ AlO_xFe _0.1Co_0.9 magnetic tunnel junctions with varied AlO _x thickness

H. Toyosaki, T. Fukumura, K. Ueno, M. Nakano, M. Kawasaki

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Magnetic tunnel junctions are fabricated by laser molecular-beam epitaxy employing a room temperature ferromagnetic semiconductor Ti1-x Cox O2-δ and a ferromagnetic metal Fe0.1 Co0.9 as electrodes and an AlOx tunnel barrier. The thickness of the AlOx barrier is systematically varied on a substrate during the growth by stencil mask. The junction resistance increases with the barrier thickness exponentially. The differential conductance and the tunneling magnetoresistance are significantly asymmetric with respect to bias voltage at low temperature, possibly due to the asymmetric junction structure and/or the degraded interface of AlOx Fe0.1 Co0.9.

Original language	English
Article number	08M102
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2163829
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2163829

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title = "Ti1-xCoxO2-δ AlOxFe 0.1Co0.9 magnetic tunnel junctions with varied AlO x thickness",

abstract = "Magnetic tunnel junctions are fabricated by laser molecular-beam epitaxy employing a room temperature ferromagnetic semiconductor Ti1-x Cox O2-δ and a ferromagnetic metal Fe0.1 Co0.9 as electrodes and an AlOx tunnel barrier. The thickness of the AlOx barrier is systematically varied on a substrate during the growth by stencil mask. The junction resistance increases with the barrier thickness exponentially. The differential conductance and the tunneling magnetoresistance are significantly asymmetric with respect to bias voltage at low temperature, possibly due to the asymmetric junction structure and/or the degraded interface of AlOx Fe0.1 Co0.9.",

author = "H. Toyosaki and T. Fukumura and K. Ueno and M. Nakano and M. Kawasaki",

note = "Funding Information: The authors gratefully acknowledge H. Ohno, F. Matsukura, and D. Chiba for discussions. This work was supported by the Japanese Ministry of Education, Culture, Sports, Science and Technology in Japan, Grant-in-Aid for Creative Science Research (14GS0204), for Young Scientists (A16 686 019), and for Scientific Research on Priority Areas (16 076 205), NEDO Industrial Technology Research Grant Program (05A24 050d). H.T. is supported by Research Fellowship of the Japan Society for the Promotion of Science for Young Scientists.",

year = "2006",

doi = "10.1063/1.2163829",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Ti1-xCoxO2-δ AlOxFe 0.1Co0.9 magnetic tunnel junctions with varied AlO x thickness

AU - Toyosaki, H.

AU - Fukumura, T.

AU - Ueno, K.

AU - Nakano, M.

AU - Kawasaki, M.

N1 - Funding Information: The authors gratefully acknowledge H. Ohno, F. Matsukura, and D. Chiba for discussions. This work was supported by the Japanese Ministry of Education, Culture, Sports, Science and Technology in Japan, Grant-in-Aid for Creative Science Research (14GS0204), for Young Scientists (A16 686 019), and for Scientific Research on Priority Areas (16 076 205), NEDO Industrial Technology Research Grant Program (05A24 050d). H.T. is supported by Research Fellowship of the Japan Society for the Promotion of Science for Young Scientists.

PY - 2006

Y1 - 2006

N2 - Magnetic tunnel junctions are fabricated by laser molecular-beam epitaxy employing a room temperature ferromagnetic semiconductor Ti1-x Cox O2-δ and a ferromagnetic metal Fe0.1 Co0.9 as electrodes and an AlOx tunnel barrier. The thickness of the AlOx barrier is systematically varied on a substrate during the growth by stencil mask. The junction resistance increases with the barrier thickness exponentially. The differential conductance and the tunneling magnetoresistance are significantly asymmetric with respect to bias voltage at low temperature, possibly due to the asymmetric junction structure and/or the degraded interface of AlOx Fe0.1 Co0.9.

AB - Magnetic tunnel junctions are fabricated by laser molecular-beam epitaxy employing a room temperature ferromagnetic semiconductor Ti1-x Cox O2-δ and a ferromagnetic metal Fe0.1 Co0.9 as electrodes and an AlOx tunnel barrier. The thickness of the AlOx barrier is systematically varied on a substrate during the growth by stencil mask. The junction resistance increases with the barrier thickness exponentially. The differential conductance and the tunneling magnetoresistance are significantly asymmetric with respect to bias voltage at low temperature, possibly due to the asymmetric junction structure and/or the degraded interface of AlOx Fe0.1 Co0.9.

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U2 - 10.1063/1.2163829

DO - 10.1063/1.2163829

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VL - 99

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JF - Journal of Applied Physics

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M1 - 08M102

ER -

Ti_1-xCo_xO_2-δ AlO_xFe _0.1Co_0.9 magnetic tunnel junctions with varied AlO _x thickness

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