Titanium nitride thin films epitaxially grown by N-implantation

Yoshitaka Kasukabe; Atsuyuki Ito; Shinji Nagata; Mokuyoshi Kishimoto; Yutaka Fujino; Sadae Yamaguchi; Yukio Yamada

doi:10.1143/jjap.36.2323

Titanium nitride thin films epitaxially grown by N-implantation

Yoshitaka Kasukabe, Atsuyuki Ito, Shinji Nagata, Mokuyoshi Kishimoto, Yutaka Fujino, Sadae Yamaguchi, Yukio Yamada

Division of Research in Higher Education

Research output: Contribution to journal › Article › peer-review

Abstract

The epitaxial growth of titanium nitride (TiN) films, formed by implanting nitrogen ions (N₂⁺) with 62 KeV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied mainly by transmission electron microscopy. It has been revealed that (001)-oriented TiN_y is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The nitriding mechanism of epitaxial Ti thin films is discussed.

Original language	English
Pages (from-to)	2323-2324
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.36.2323
Publication status	Published - 1997 Apr

Keywords

Epitaxy
Evaporated Ti films
N-implantation
Nitriding
TEM
TiN
Transformation
hcp-Ti

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.36.2323

Cite this

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title = "Titanium nitride thin films epitaxially grown by N-implantation",

abstract = "The epitaxial growth of titanium nitride (TiN) films, formed by implanting nitrogen ions (N2+) with 62 KeV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied mainly by transmission electron microscopy. It has been revealed that (001)-oriented TiNy is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The nitriding mechanism of epitaxial Ti thin films is discussed.",

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author = "Yoshitaka Kasukabe and Atsuyuki Ito and Shinji Nagata and Mokuyoshi Kishimoto and Yutaka Fujino and Sadae Yamaguchi and Yukio Yamada",

year = "1997",

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doi = "10.1143/jjap.36.2323",

language = "English",

volume = "36",

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T1 - Titanium nitride thin films epitaxially grown by N-implantation

AU - Kasukabe, Yoshitaka

AU - Ito, Atsuyuki

AU - Nagata, Shinji

AU - Kishimoto, Mokuyoshi

AU - Fujino, Yutaka

AU - Yamaguchi, Sadae

AU - Yamada, Yukio

PY - 1997/4

Y1 - 1997/4

N2 - The epitaxial growth of titanium nitride (TiN) films, formed by implanting nitrogen ions (N2+) with 62 KeV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied mainly by transmission electron microscopy. It has been revealed that (001)-oriented TiNy is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The nitriding mechanism of epitaxial Ti thin films is discussed.

AB - The epitaxial growth of titanium nitride (TiN) films, formed by implanting nitrogen ions (N2+) with 62 KeV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied mainly by transmission electron microscopy. It has been revealed that (001)-oriented TiNy is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The nitriding mechanism of epitaxial Ti thin films is discussed.

KW - Epitaxy

KW - Evaporated Ti films

KW - N-implantation

KW - Nitriding

KW - TEM

KW - TiN

KW - Transformation

KW - hcp-Ti

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Titanium nitride thin films epitaxially grown by N-implantation

Abstract

Keywords

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