Titanium nitride thin films epitaxially grown by N-implantation

Yoshitaka Kasukabe, Atsuyuki Ito, Shinji Nagata, Mokuyoshi Kishimoto, Yutaka Fujino, Sadae Yamaguchi, Yukio Yamada

Research output: Contribution to journalArticlepeer-review


The epitaxial growth of titanium nitride (TiN) films, formed by implanting nitrogen ions (N2+) with 62 KeV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied mainly by transmission electron microscopy. It has been revealed that (001)-oriented TiNy is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The nitriding mechanism of epitaxial Ti thin films is discussed.

Original languageEnglish
Pages (from-to)2323-2324
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 A
Publication statusPublished - 1997 Apr


  • Epitaxy
  • Evaporated Ti films
  • N-implantation
  • Nitriding
  • TEM
  • TiN
  • Transformation
  • hcp-Ti

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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