Total reflection x-ray excited photoelectron spectra of copper phthalocyanine thin layer on Si wafer

Jun Kawai; Shin'Ichi Kawato; Kouichi Hayashi; Toshihisa Horiuchi; Kazumi Matsushige; Yoshinori Kitajima

doi:10.1063/1.115307

Total reflection x-ray excited photoelectron spectra of copper phthalocyanine thin layer on Si wafer

Jun Kawai, Shin'Ichi Kawato, Kouichi Hayashi, Toshihisa Horiuchi, Kazumi Matsushige, Yoshinori Kitajima

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Photoelectron spectra of a Si wafer, on which copper phthalocyanine was evaporated with a thickness of 50 Å, were measured using grazing incidence x rays under a total reflection condition. It was observed that the backgrounds owing to inelastic electron scattering in solids were reduced. It was also observed that the substrate Si signal was removed and that surface signal was enhanced due to the total x-ray reflection. Oxygen depth was determined using the angle dependence of the x-ray photoelectron spectral intensity.

Original language	English
Pages (from-to)	3889
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115307
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.115307

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title = "Total reflection x-ray excited photoelectron spectra of copper phthalocyanine thin layer on Si wafer",

abstract = "Photoelectron spectra of a Si wafer, on which copper phthalocyanine was evaporated with a thickness of 50 {\AA}, were measured using grazing incidence x rays under a total reflection condition. It was observed that the backgrounds owing to inelastic electron scattering in solids were reduced. It was also observed that the substrate Si signal was removed and that surface signal was enhanced due to the total x-ray reflection. Oxygen depth was determined using the angle dependence of the x-ray photoelectron spectral intensity.",

author = "Jun Kawai and Shin'Ichi Kawato and Kouichi Hayashi and Toshihisa Horiuchi and Kazumi Matsushige and Yoshinori Kitajima",

year = "1995",

doi = "10.1063/1.115307",

language = "English",

volume = "67",

pages = "3889",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Total reflection x-ray excited photoelectron spectra of copper phthalocyanine thin layer on Si wafer

AU - Kawai, Jun

AU - Kawato, Shin'Ichi

AU - Hayashi, Kouichi

AU - Horiuchi, Toshihisa

AU - Matsushige, Kazumi

AU - Kitajima, Yoshinori

PY - 1995

Y1 - 1995

N2 - Photoelectron spectra of a Si wafer, on which copper phthalocyanine was evaporated with a thickness of 50 Å, were measured using grazing incidence x rays under a total reflection condition. It was observed that the backgrounds owing to inelastic electron scattering in solids were reduced. It was also observed that the substrate Si signal was removed and that surface signal was enhanced due to the total x-ray reflection. Oxygen depth was determined using the angle dependence of the x-ray photoelectron spectral intensity.

AB - Photoelectron spectra of a Si wafer, on which copper phthalocyanine was evaporated with a thickness of 50 Å, were measured using grazing incidence x rays under a total reflection condition. It was observed that the backgrounds owing to inelastic electron scattering in solids were reduced. It was also observed that the substrate Si signal was removed and that surface signal was enhanced due to the total x-ray reflection. Oxygen depth was determined using the angle dependence of the x-ray photoelectron spectral intensity.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029546120&partnerID=8YFLogxK

U2 - 10.1063/1.115307

DO - 10.1063/1.115307

M3 - Article

AN - SCOPUS:0029546120

SN - 0003-6951

VL - 67

SP - 3889

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Total reflection x-ray excited photoelectron spectra of copper phthalocyanine thin layer on Si wafer

Abstract

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