TY - JOUR
T1 - Transient absorption spectroscopy of TLBr crystals using pulsed electron beams
AU - Koshimizu, Masanori
AU - Muroya, Yusa
AU - Yamashita, Shinichi
AU - Nogami, Mitsuhiro
AU - Hitomi, Keitaro
AU - Fujimoto, Yutaka
AU - Asai, Keisuke
N1 - Funding Information:
This research was supported by a Grant-in-Aid for Scientific Research (A) (No. 19H00880, 2019–2022). Part of this research is based on the Cooperative Research Project of the Research Center for Biomedical Engineering, Ministry of Education, Culture, Sports, Science and Technology of Japan. This work was performed under the Cooperative Research Program of “Network Joint Research Center for Materials and Devices”, and as a collaborative research project at the Nuclear Professional School, School of Engineering, The University of Tokyo. We thank Professor M. Uesaka and Mr. T. Ueda of The University of Tokyo for providing support in the experiment.
Publisher Copyright:
© MYU K.K.
PY - 2020/4/20
Y1 - 2020/4/20
N2 - We analyzed the transient absorption properties of TlBr crystals using pulsed electron beams as excitation sources. We observed transient absorption spectra and temporal profiles on the pico- and nanosecond scales and compared the results obtained for TIBr crystals that are empirically appropriate with those that are inappropriate for semiconductor detectors. The results showed negligible differences in properties between the two types of crystal, which indicates that their trap center concentrations were similar. A transient absorption band was observed at approximately 1160 nm on the nanosecond scale, while its short-wavelength tail was observed on the picosecond scale. The absorption band is attributed to the localized holes at Tl+ that are stabilized by some defects. In contrast, no absorption band attributable to localized electron centers was observed, indicating that while hole transport is hindered by defects, electron transport is not.
AB - We analyzed the transient absorption properties of TlBr crystals using pulsed electron beams as excitation sources. We observed transient absorption spectra and temporal profiles on the pico- and nanosecond scales and compared the results obtained for TIBr crystals that are empirically appropriate with those that are inappropriate for semiconductor detectors. The results showed negligible differences in properties between the two types of crystal, which indicates that their trap center concentrations were similar. A transient absorption band was observed at approximately 1160 nm on the nanosecond scale, while its short-wavelength tail was observed on the picosecond scale. The absorption band is attributed to the localized holes at Tl+ that are stabilized by some defects. In contrast, no absorption band attributable to localized electron centers was observed, indicating that while hole transport is hindered by defects, electron transport is not.
KW - Carrier transport
KW - Pulse radiolysis
KW - Semiconductor detector
KW - TlBr
KW - Transient absorption
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U2 - 10.18494/SAM.2020.2754
DO - 10.18494/SAM.2020.2754
M3 - Article
AN - SCOPUS:85084051926
SN - 0914-4935
VL - 32
SP - 1445
EP - 1451
JO - Sensors and Materials
JF - Sensors and Materials
IS - 4
ER -