Transient characteristic of fabricated magnetic tunnel junction (MTJ) programmed with CMOS circuit

Masashi Kamiyanagi; Fumitaka Iga; Shoji Ikeda; Katsuya Miura; Jun Hayakawa; Haruhiro Hasegawa; Takahiro Hanyu; Hideo Ohno; Tetsuo Endoh

doi:10.1587/transele.E93.C.602

Transient characteristic of fabricated magnetic tunnel junction (MTJ) programmed with CMOS circuit

Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, it is shown that our fabricated MTJ of 60 × 180 nm², which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14 μm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with sampling period of 10 nsec, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60 × 180 nm² MTJ is less than 30ns with its programming current of 500 μA and the resistance change of 1.2 kω.

Original language	English
Pages (from-to)	602-607
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E93-C
Issue number	5
DOIs	https://doi.org/10.1587/transele.E93.C.602
Publication status	Published - 2010 Jan 1

Keywords

CMOS
Magnetic tunnel junction (MTJ)
Spin-injection
Spin-transfer torque random access memory (STT-RAM)
Tunnel magnetoresistance (TMR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1587/transele.E93.C.602

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title = "Transient characteristic of fabricated magnetic tunnel junction (MTJ) programmed with CMOS circuit",

abstract = "In this paper, it is shown that our fabricated MTJ of 60 × 180 nm2, which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14 μm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with sampling period of 10 nsec, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60 × 180 nm2 MTJ is less than 30ns with its programming current of 500 μA and the resistance change of 1.2 kω.",

keywords = "CMOS, Magnetic tunnel junction (MTJ), Spin-injection, Spin-transfer torque random access memory (STT-RAM), Tunnel magnetoresistance (TMR)",

author = "Masashi Kamiyanagi and Fumitaka Iga and Shoji Ikeda and Katsuya Miura and Jun Hayakawa and Haruhiro Hasegawa and Takahiro Hanyu and Hideo Ohno and Tetsuo Endoh",

year = "2010",

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doi = "10.1587/transele.E93.C.602",

language = "English",

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AU - Kamiyanagi, Masashi

AU - Iga, Fumitaka

AU - Ikeda, Shoji

AU - Miura, Katsuya

AU - Hayakawa, Jun

AU - Hasegawa, Haruhiro

AU - Hanyu, Takahiro

AU - Ohno, Hideo

AU - Endoh, Tetsuo

PY - 2010/1/1

Y1 - 2010/1/1

N2 - In this paper, it is shown that our fabricated MTJ of 60 × 180 nm2, which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14 μm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with sampling period of 10 nsec, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60 × 180 nm2 MTJ is less than 30ns with its programming current of 500 μA and the resistance change of 1.2 kω.

AB - In this paper, it is shown that our fabricated MTJ of 60 × 180 nm2, which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14 μm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with sampling period of 10 nsec, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60 × 180 nm2 MTJ is less than 30ns with its programming current of 500 μA and the resistance change of 1.2 kω.

KW - CMOS

KW - Magnetic tunnel junction (MTJ)

KW - Spin-injection

KW - Spin-transfer torque random access memory (STT-RAM)

KW - Tunnel magnetoresistance (TMR)

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JO - IEICE Transactions on Electronics

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Transient characteristic of fabricated magnetic tunnel junction (MTJ) programmed with CMOS circuit

Abstract

Keywords

ASJC Scopus subject areas

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