Abstract
The effect of substrate temperature and process pressure on microstructure of MOCVD-TiN films deposited on oxidized Si substrates are studied by transmission electron microscopy (TEM). It is found that microstructure of MOCVD-TiN films distinctly changes with these deposition parameters and that the resistivity of the films is uniquely related to the microstructure. Films with the lowest resistivity (< 500 μohm-cm) show a uniform semi-columnar grain structure. Films with the highest resistivity (> 10,000 μohm-cm) show a uniform equi-axed micrograin structure. The other films exhibit a bi-layer structure: one layer of semi-columnar grains and the other of equiaxed micrograins. The thickness ratio of these layers changes with the deposition conditions and the resistivity is a unique function of the thickness of the semi-columnar grain layer.
| Original language | English |
|---|---|
| Pages (from-to) | 735-740 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 337 |
| Publication status | Published - 1994 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: 1994 Apr 4 → 1994 Apr 8 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering