Transmission electron microscopy of MOCVD titanium nitride films

Toshio Itoh, Toyohiko J. Konno, Robert Sinclair, Ivo J.M.M. Raaijmakers, Bruce E. Roberts

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


The effect of substrate temperature and process pressure on microstructure of MOCVD-TiN films deposited on oxidized Si substrates are studied by transmission electron microscopy (TEM). It is found that microstructure of MOCVD-TiN films distinctly changes with these deposition parameters and that the resistivity of the films is uniquely related to the microstructure. Films with the lowest resistivity (< 500 μohm-cm) show a uniform semi-columnar grain structure. Films with the highest resistivity (> 10,000 μohm-cm) show a uniform equi-axed micrograin structure. The other films exhibit a bi-layer structure: one layer of semi-columnar grains and the other of equiaxed micrograins. The thickness ratio of these layers changes with the deposition conditions and the resistivity is a unique function of the thickness of the semi-columnar grain layer.

Original languageEnglish
Pages (from-to)735-740
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1994 Dec 1
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1994 Apr 41994 Apr 8

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Transmission electron microscopy of MOCVD titanium nitride films'. Together they form a unique fingerprint.

Cite this