Transparent conducting Nb-doped anatase TiO2 (TNO) thin films sputtered from various oxide targets

Naoomi Yamada, Taro Hitosugi, Junpei Kasai, Ngoc Lam Huong Hoang, Shoichiro Nakao, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

    Research output: Contribution to journalArticlepeer-review

    47 Citations (Scopus)


    Transparent conducting Nb-doped anatase TiO2 (TNO) epitaxial films were sputtered from TiO2-, Ti2O3-, and Ti-based targets at various oxygen partial pressures (Po2). Using the TiO2- and Ti2O3-based targets, highly conductive films showing a resistivity (ρ) of ~ 3 × 10- 4 Ω cm could be formed without postdeposition treatment. In the case of the TNO films formed from the Ti-based target, reductive annealing had to be carried out at a temperature of 600 °C to achieve similar resistivity values. Thus, the use of oxide targets is preferable to obtain as-grown transparent conducting TNO films. In particular, the Ti2O3-based target is practically advantageous, because it offers a wide range of optimal Po2 values at which ρ values of the order of 10- 4 Ω cm are achievable.

    Original languageEnglish
    Pages (from-to)3101-3104
    Number of pages4
    JournalThin Solid Films
    Issue number11
    Publication statusPublished - 2010 Mar 31


    • Anatase
    • Nb-doped TiO
    • Sputtering
    • TiO
    • Transparent conducting oxides

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry


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