Transparent conducting Nb-doped anatase TiO2 (TNO) thin films sputtered from various oxide targets

Naoomi Yamada; Taro Hitosugi; Junpei Kasai; Ngoc Lam Huong Hoang; Shoichiro Nakao; Yasushi Hirose; Toshihiro Shimada; Tetsuya Hasegawa

doi:10.1016/j.tsf.2009.07.205

Transparent conducting Nb-doped anatase TiO₂ (TNO) thin films sputtered from various oxide targets

Naoomi Yamada, Taro Hitosugi, Junpei Kasai, Ngoc Lam Huong Hoang, Shoichiro Nakao, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Transparent conducting Nb-doped anatase TiO₂ (TNO) epitaxial films were sputtered from TiO₂-, Ti₂O₃-, and Ti-based targets at various oxygen partial pressures (Po₂). Using the TiO₂- and Ti₂O₃-based targets, highly conductive films showing a resistivity (ρ) of ~ 3 × 10^{- 4} Ω cm could be formed without postdeposition treatment. In the case of the TNO films formed from the Ti-based target, reductive annealing had to be carried out at a temperature of 600 °C to achieve similar resistivity values. Thus, the use of oxide targets is preferable to obtain as-grown transparent conducting TNO films. In particular, the Ti₂O₃-based target is practically advantageous, because it offers a wide range of optimal Po₂ values at which ρ values of the order of 10^{- 4} Ω cm are achievable.

Original language	English
Pages (from-to)	3101-3104
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2009.07.205
Publication status	Published - 2010 Mar 31

Keywords

Anatase
Nb-doped TiO
Sputtering
TiO
Transparent conducting oxides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.07.205

Cite this

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title = "Transparent conducting Nb-doped anatase TiO2 (TNO) thin films sputtered from various oxide targets",

abstract = "Transparent conducting Nb-doped anatase TiO2 (TNO) epitaxial films were sputtered from TiO2-, Ti2O3-, and Ti-based targets at various oxygen partial pressures (Po2). Using the TiO2- and Ti2O3-based targets, highly conductive films showing a resistivity (ρ) of ~ 3 × 10- 4 Ω cm could be formed without postdeposition treatment. In the case of the TNO films formed from the Ti-based target, reductive annealing had to be carried out at a temperature of 600 °C to achieve similar resistivity values. Thus, the use of oxide targets is preferable to obtain as-grown transparent conducting TNO films. In particular, the Ti2O3-based target is practically advantageous, because it offers a wide range of optimal Po2 values at which ρ values of the order of 10- 4 Ω cm are achievable.",

keywords = "Anatase, Nb-doped TiO, Sputtering, TiO, Transparent conducting oxides",

author = "Naoomi Yamada and Taro Hitosugi and Junpei Kasai and Hoang, {Ngoc Lam Huong} and Shoichiro Nakao and Yasushi Hirose and Toshihiro Shimada and Tetsuya Hasegawa",

note = "Funding Information: This study was supported by MEXT Elements Science and Technology Project and a Grant-in-Aid for Young Scientist (B) 19760475, 2007 .",

year = "2010",

month = mar,

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doi = "10.1016/j.tsf.2009.07.205",

language = "English",

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T1 - Transparent conducting Nb-doped anatase TiO2 (TNO) thin films sputtered from various oxide targets

AU - Yamada, Naoomi

AU - Hitosugi, Taro

AU - Kasai, Junpei

AU - Hoang, Ngoc Lam Huong

AU - Nakao, Shoichiro

AU - Hirose, Yasushi

AU - Shimada, Toshihiro

AU - Hasegawa, Tetsuya

N1 - Funding Information: This study was supported by MEXT Elements Science and Technology Project and a Grant-in-Aid for Young Scientist (B) 19760475, 2007 .

PY - 2010/3/31

Y1 - 2010/3/31

N2 - Transparent conducting Nb-doped anatase TiO2 (TNO) epitaxial films were sputtered from TiO2-, Ti2O3-, and Ti-based targets at various oxygen partial pressures (Po2). Using the TiO2- and Ti2O3-based targets, highly conductive films showing a resistivity (ρ) of ~ 3 × 10- 4 Ω cm could be formed without postdeposition treatment. In the case of the TNO films formed from the Ti-based target, reductive annealing had to be carried out at a temperature of 600 °C to achieve similar resistivity values. Thus, the use of oxide targets is preferable to obtain as-grown transparent conducting TNO films. In particular, the Ti2O3-based target is practically advantageous, because it offers a wide range of optimal Po2 values at which ρ values of the order of 10- 4 Ω cm are achievable.

AB - Transparent conducting Nb-doped anatase TiO2 (TNO) epitaxial films were sputtered from TiO2-, Ti2O3-, and Ti-based targets at various oxygen partial pressures (Po2). Using the TiO2- and Ti2O3-based targets, highly conductive films showing a resistivity (ρ) of ~ 3 × 10- 4 Ω cm could be formed without postdeposition treatment. In the case of the TNO films formed from the Ti-based target, reductive annealing had to be carried out at a temperature of 600 °C to achieve similar resistivity values. Thus, the use of oxide targets is preferable to obtain as-grown transparent conducting TNO films. In particular, the Ti2O3-based target is practically advantageous, because it offers a wide range of optimal Po2 values at which ρ values of the order of 10- 4 Ω cm are achievable.

KW - Anatase

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KW - Sputtering

KW - TiO

KW - Transparent conducting oxides

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