Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

D. H. Kim; D. K. Kim; J. U. Cho; S. Y. Park; S. Isogami; M. Tsunoda; M. Takahashi; E. E. Fullerton; Y. K. Kim

doi:10.1063/1.4709738

Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

D. H. Kim, D. K. Kim, J. U. Cho, S. Y. Park, S. Isogami, M. Tsunoda, M. Takahashi, E. E. Fullerton, Y. K. Kim

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Abstract

We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm ², respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm ². This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

Original language	English
Article number	093913
Journal	Journal of Applied Physics
Volume	111
Issue number	9
DOIs	https://doi.org/10.1063/1.4709738
Publication status	Published - 2012 May 1

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title = "Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers",

abstract = "We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.",

author = "Kim, {D. H.} and Kim, {D. K.} and Cho, {J. U.} and Park, {S. Y.} and S. Isogami and M. Tsunoda and M. Takahashi and Fullerton, {E. E.} and Kim, {Y. K.}",

note = "Funding Information: This work was supported in part by the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (2011-0016497).",

year = "2012",

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doi = "10.1063/1.4709738",

language = "English",

volume = "111",

journal = "Journal of Applied Physics",

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T1 - Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

AU - Kim, D. H.

AU - Kim, D. K.

AU - Cho, J. U.

AU - Park, S. Y.

AU - Isogami, S.

AU - Tsunoda, M.

AU - Takahashi, M.

AU - Fullerton, E. E.

AU - Kim, Y. K.

N1 - Funding Information: This work was supported in part by the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (2011-0016497).

PY - 2012/5/1

Y1 - 2012/5/1

N2 - We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

AB - We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

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Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

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