@article{513e8afdafe0416a8c4d787e7ee05668,
title = "Transport characteristics of InSb trench-type in-plane gate quantum point contact",
abstract = "An InSb quantum point contact (QPC) has been fabricated in a two-dimensional InSb heterostructure by using a trench-type in-plane gate. The magneto-transport characteristics show magneto-depopulation of 1D subbands under a perpendicular magnetic field and crossings of the 1D subbands under an in-plane magnetic field. The estimated effective g-factor has in-plane (|g∗x| ∼ |g∗y| ∼ 40) and out-of-plane (|g7z.ast;z| ∼ 60) anisotropy. When a positive voltage is applied to the trench gate, the QPC device shows the typical characteristics of parallel channels, suggesting electron accumulation along the side walls of the trench.",
author = "T. Masuda and K. Sekine and K. Nagase and Wickramasinghe, {K. S.} and Mishima, {T. D.} and Santos, {M. B.} and Y. Hirayama",
note = "Funding Information: Y.H. thanks the JSPS (KAKENHI 15H05867, 15K21727, and 26287059) for its support. T.M. and Y.H. acknowledge the support from the Tohoku University's MD-program. K.N. and Y.H. also acknowledge the support from the Tohoku University's GP-Spin program. Funding Information: We thank T. Inaoka and M. H. Fauzi for fruitful discussions. Y.H. thanks the JSPS (KAKENHI 15H05867, 15K21727, and 26287059) for its support. T.M. and Y.H. acknowledge the support from the Tohoku University{\textquoteright}s MD-program. K.N. and Y.H. also acknowledge the support from the Tohoku University{\textquoteright}s GP-Spin program. Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = may,
day = "7",
doi = "10.1063/1.5023836",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "19",
}