Transport characteristics of InSb trench-type in-plane gate quantum point contact

T. Masuda, K. Sekine, K. Nagase, K. S. Wickramasinghe, T. D. Mishima, M. B. Santos, Y. Hirayama

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16 Citations (Scopus)


An InSb quantum point contact (QPC) has been fabricated in a two-dimensional InSb heterostructure by using a trench-type in-plane gate. The magneto-transport characteristics show magneto-depopulation of 1D subbands under a perpendicular magnetic field and crossings of the 1D subbands under an in-plane magnetic field. The estimated effective g-factor has in-plane (|g∗x| ∼ |g∗y| ∼ 40) and out-of-plane (|g7z.ast;z| ∼ 60) anisotropy. When a positive voltage is applied to the trench gate, the QPC device shows the typical characteristics of parallel channels, suggesting electron accumulation along the side walls of the trench.

Original languageEnglish
Article number192103
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2018 May 7


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