Transport characteristics of multiple parallel balistic point contacts

Y. Hirayama

doi:10.7567/ssdm.1990.s-a-4

Transport characteristics of multiple parallel balistic point contacts

Research output: Contribution to conference › Paper › peer-review

Abstract

Multiple parallel ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. Total conductance of the fabricated structure in zero magnetic field is the sum of the conductance of each contact, and quantized characteristics are observed in the μA order. On the other hand, conductance of multiple parallel point contacts drastically decreases in a magnetic field. This conductance decrease originates from the novel type of magneto-depopulation accompanying ballistic circulating channels through pairs of contacts. Conductance oscillations corresponding to interference in circulating channels are also observed in the fabricated structures.

Original language	English
Pages	729-732
Number of pages	4
DOIs	https://doi.org/10.7567/ssdm.1990.s-a-4
Publication status	Published - 1990
Externally published	Yes
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24

Other

Other	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	90/8/22 → 90/8/24

ASJC Scopus subject areas

Engineering(all)

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10.7567/ssdm.1990.s-a-4

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@conference{b13457ffff9043d6a2428b3bef192a60,

title = "Transport characteristics of multiple parallel balistic point contacts",

abstract = "Multiple parallel ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. Total conductance of the fabricated structure in zero magnetic field is the sum of the conductance of each contact, and quantized characteristics are observed in the μA order. On the other hand, conductance of multiple parallel point contacts drastically decreases in a magnetic field. This conductance decrease originates from the novel type of magneto-depopulation accompanying ballistic circulating channels through pairs of contacts. Conductance oscillations corresponding to interference in circulating channels are also observed in the fabricated structures.",

author = "Y. Hirayama",

year = "1990",

doi = "10.7567/ssdm.1990.s-a-4",

language = "English",

pages = "729--732",

note = "22nd International Conference on Solid State Devices and Materials ; Conference date: 22-08-1990 Through 24-08-1990",

}

TY - CONF

T1 - Transport characteristics of multiple parallel balistic point contacts

AU - Hirayama, Y.

PY - 1990

Y1 - 1990

N2 - Multiple parallel ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. Total conductance of the fabricated structure in zero magnetic field is the sum of the conductance of each contact, and quantized characteristics are observed in the μA order. On the other hand, conductance of multiple parallel point contacts drastically decreases in a magnetic field. This conductance decrease originates from the novel type of magneto-depopulation accompanying ballistic circulating channels through pairs of contacts. Conductance oscillations corresponding to interference in circulating channels are also observed in the fabricated structures.

AB - Multiple parallel ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. Total conductance of the fabricated structure in zero magnetic field is the sum of the conductance of each contact, and quantized characteristics are observed in the μA order. On the other hand, conductance of multiple parallel point contacts drastically decreases in a magnetic field. This conductance decrease originates from the novel type of magneto-depopulation accompanying ballistic circulating channels through pairs of contacts. Conductance oscillations corresponding to interference in circulating channels are also observed in the fabricated structures.

UR - http://www.scopus.com/inward/record.url?scp=0025568027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025568027&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1990.s-a-4

DO - 10.7567/ssdm.1990.s-a-4

M3 - Paper

AN - SCOPUS:0025568027

SP - 729

EP - 732

T2 - 22nd International Conference on Solid State Devices and Materials

Y2 - 22 August 1990 through 24 August 1990

ER -

Transport characteristics of multiple parallel balistic point contacts

Abstract

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