Transport characteristics of series ballistic one-dimensional channels with small separation

Yoshiro Hirayama; Tadashi Saku

doi:10.1016/0038-1098(90)91029-G

Transport characteristics of series ballistic one-dimensional channels with small separation

Research output: Contribution to journal › Article › peer-review

Abstract

Series ballistic one-dimensional (1-D) channels with a separation (L_sp) of 200 nm and 400 nm are fabricated by focused Ga ion beam scanning. For the L_sp=400 nm sample, step structures similar to those of a single ballistic channel are observed in resistance-gate voltage (V_g) characteristics. Although plateau resistances are larger than quantized resistance values (R_n) at zero magnetic field, they decrease and approach R_n as the magnetic field increases. On the other hand, for the L_sp=200 nm sample, resistance oscillates as a function of V_g. This oscillation originates from zero-dimensional (0-D) states in the structure. Furthermore, a new resistance oscillation that probably corresponds to 0-D energy levels crossing with magnetic fields is clearly observed for the L_sp=200 nm sample.

Original language	English
Pages (from-to)	113-117
Number of pages	5
Journal	Solid State Communications
Volume	73
Issue number	2
DOIs	https://doi.org/10.1016/0038-1098(90)91029-G
Publication status	Published - 1990 Jan
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(90)91029-G

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@article{ddb8b89f21d4454f8d2b4693cc840f7c,

title = "Transport characteristics of series ballistic one-dimensional channels with small separation",

abstract = "Series ballistic one-dimensional (1-D) channels with a separation (Lsp) of 200 nm and 400 nm are fabricated by focused Ga ion beam scanning. For the Lsp=400 nm sample, step structures similar to those of a single ballistic channel are observed in resistance-gate voltage (Vg) characteristics. Although plateau resistances are larger than quantized resistance values (Rn) at zero magnetic field, they decrease and approach Rn as the magnetic field increases. On the other hand, for the Lsp=200 nm sample, resistance oscillates as a function of Vg. This oscillation originates from zero-dimensional (0-D) states in the structure. Furthermore, a new resistance oscillation that probably corresponds to 0-D energy levels crossing with magnetic fields is clearly observed for the Lsp=200 nm sample.",

author = "Yoshiro Hirayama and Tadashi Saku",

year = "1990",

month = jan,

doi = "10.1016/0038-1098(90)91029-G",

language = "English",

volume = "73",

pages = "113--117",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - Transport characteristics of series ballistic one-dimensional channels with small separation

AU - Hirayama, Yoshiro

AU - Saku, Tadashi

PY - 1990/1

Y1 - 1990/1

N2 - Series ballistic one-dimensional (1-D) channels with a separation (Lsp) of 200 nm and 400 nm are fabricated by focused Ga ion beam scanning. For the Lsp=400 nm sample, step structures similar to those of a single ballistic channel are observed in resistance-gate voltage (Vg) characteristics. Although plateau resistances are larger than quantized resistance values (Rn) at zero magnetic field, they decrease and approach Rn as the magnetic field increases. On the other hand, for the Lsp=200 nm sample, resistance oscillates as a function of Vg. This oscillation originates from zero-dimensional (0-D) states in the structure. Furthermore, a new resistance oscillation that probably corresponds to 0-D energy levels crossing with magnetic fields is clearly observed for the Lsp=200 nm sample.

AB - Series ballistic one-dimensional (1-D) channels with a separation (Lsp) of 200 nm and 400 nm are fabricated by focused Ga ion beam scanning. For the Lsp=400 nm sample, step structures similar to those of a single ballistic channel are observed in resistance-gate voltage (Vg) characteristics. Although plateau resistances are larger than quantized resistance values (Rn) at zero magnetic field, they decrease and approach Rn as the magnetic field increases. On the other hand, for the Lsp=200 nm sample, resistance oscillates as a function of Vg. This oscillation originates from zero-dimensional (0-D) states in the structure. Furthermore, a new resistance oscillation that probably corresponds to 0-D energy levels crossing with magnetic fields is clearly observed for the Lsp=200 nm sample.

UR - http://www.scopus.com/inward/record.url?scp=0025200199&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025200199&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(90)91029-G

DO - 10.1016/0038-1098(90)91029-G

M3 - Article

AN - SCOPUS:0025200199

SN - 0038-1098

VL - 73

SP - 113

EP - 117

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Transport characteristics of series ballistic one-dimensional channels with small separation

Abstract

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