Transport in gated undoped GaAs/AlxGa1−xAs heterostructures in the high density and high mobility range

J. Herfort; Y. Hirayama

doi:10.1063/1.117306

Transport in gated undoped GaAs/Al_xGa_1−xAs heterostructures in the high density and high mobility range

J. Herfort, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The two‐dimensional electron gas with electron densities higher than 10¹⁶ m⁻² which is formed at the interface in undoped GaAs/Al_xGa_1−xAs heterostructure by the electric field generated by a top gate is studied. Despite the high electron density in the sample, rather high mobilities of about 100 m²/Vs can be achieved with sufficient small gate leakage currents. The population of the second subband is studied from Shubnikov‐de Haas measurements in these devices.

Original language	English
Pages (from-to)	3360-3362
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	22
DOIs	https://doi.org/10.1063/1.117306
Publication status	Published - 1996 Nov 25

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Transport in gated undoped GaAs/Al_xGa_1−xAs heterostructures in the high density and high mobility range

Abstract

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