Transport mechanism of interfacial network forming atoms during silicon oxidation

Hiroyuki Kageshima; Masahi Uematsu; Kazuto Akagi; Shinji Tsuneyuki; Toru Akiyama; Kenji Shiraishi

doi:10.1143/JJAP.45.694

Transport mechanism of interfacial network forming atoms during silicon oxidation

Hiroyuki Kageshima, Masahi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, Kenji Shiraishi

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.

Original language	English
Pages (from-to)	694-699
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.45.694
Publication status	Published - 2006 Feb 8

Keywords

Defects
First-principles calculation
Interface
Oxidation
Si
Si oxide
Transformation

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10.1143/JJAP.45.694

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AU - Uematsu, Masahi

AU - Akagi, Kazuto

AU - Tsuneyuki, Shinji

AU - Akiyama, Toru

AU - Shiraishi, Kenji

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AB - A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.

KW - Defects

KW - First-principles calculation

KW - Interface

KW - Oxidation

KW - Si

KW - Si oxide

KW - Transformation

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Transport mechanism of interfacial network forming atoms during silicon oxidation

Abstract

Keywords

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