Transport mechanism of interfacial network forming atoms during silicon oxidation

Hiroyuki Kageshima, Masahi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, Kenji Shiraishi

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.

Original languageEnglish
Pages (from-to)694-699
Number of pages6
JournalJapanese Journal of Applied Physics
Issue number2 A
Publication statusPublished - 2006 Feb 8


  • Defects
  • First-principles calculation
  • Interface
  • Oxidation
  • Si
  • Si oxide
  • Transformation


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