TY - JOUR
T1 - Transport of deposited atoms throughout strain-mediated self-assembly
AU - Moutanabbir, Oussama
AU - Miyamoto, Satoru
AU - Haller, Eugene E.
AU - Itoh, Kohei M.
PY - 2010/7/6
Y1 - 2010/7/6
N2 - Using enriched isotopes, we developed a method to elucidate the long-standing issue of Ge transport governing the strain-driven self-assembly. Here Ge76 was employed to form the 2D metastable layer on a Si(001) surface, while the 3D transition and growth were completed by additional evaporation of Ge70. This isotope tracing combined with the analysis of the Ge-Ge LO phonon enables the tracking of the origin of Ge atoms and their flow towards the growing islands. This atomic transport was quantified based on the quasiharmonic approximation of Ge-Ge vibrations and described using a rate equation model.
AB - Using enriched isotopes, we developed a method to elucidate the long-standing issue of Ge transport governing the strain-driven self-assembly. Here Ge76 was employed to form the 2D metastable layer on a Si(001) surface, while the 3D transition and growth were completed by additional evaporation of Ge70. This isotope tracing combined with the analysis of the Ge-Ge LO phonon enables the tracking of the origin of Ge atoms and their flow towards the growing islands. This atomic transport was quantified based on the quasiharmonic approximation of Ge-Ge vibrations and described using a rate equation model.
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U2 - 10.1103/PhysRevLett.105.026101
DO - 10.1103/PhysRevLett.105.026101
M3 - Article
AN - SCOPUS:77954392641
SN - 0031-9007
VL - 105
JO - Physical Review Letters
JF - Physical Review Letters
IS - 2
M1 - 026101
ER -