TY - JOUR
T1 - Transport properties and origin of ferromagnetism in (Ga, Mn)As
AU - Matsukura, F.
AU - Ohno, H.
AU - Shen, A.
AU - Sugawara, Y.
PY - 1998
Y1 - 1998
N2 - Magnetotransport properties of (Formula presented)-type ferromagnetic (Ga, Mn)As, a diluted magnetic semiconductor based on III-V semiconductors, are measured and the (Formula presented) exchange between holes and Mn (Formula presented) spins is determined. The ferromagnetic transition temperatures calculated based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction using the exchange reproduce remarkably well the observed ferromagnetic transition temperatures, demonstrating that ferromagnetism of (Ga, Mn)As has its origin in the RKKY interaction mediated by holes.
AB - Magnetotransport properties of (Formula presented)-type ferromagnetic (Ga, Mn)As, a diluted magnetic semiconductor based on III-V semiconductors, are measured and the (Formula presented) exchange between holes and Mn (Formula presented) spins is determined. The ferromagnetic transition temperatures calculated based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction using the exchange reproduce remarkably well the observed ferromagnetic transition temperatures, demonstrating that ferromagnetism of (Ga, Mn)As has its origin in the RKKY interaction mediated by holes.
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U2 - 10.1103/PhysRevB.57.R2037
DO - 10.1103/PhysRevB.57.R2037
M3 - Article
AN - SCOPUS:0000497954
SN - 1098-0121
VL - 57
SP - R2037-R2040
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 4
ER -