Transport properties in InP/InAlAs type II single heterostructure

Hiroshi Matsui, Masaki Narushima, Yasuhiro Iuima, Yuichi Kawamura, Naohisa Inoue, Hidetoshi Iwamura, Satoshi Endo, Hiroshi Uozaki, Naoki Toyota

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1 Citation (Scopus)


A type II interface is formed in an undoped InP/InAlAs single heterostructure grown by gas source molecular beam epitaxy. From measurements of the electrical resistivity, magnetoresistance and Hall effect, it is confirmed that a two-dimensional electron gas system containing a sheet carrier concentration of 1.8 × 1011 cm-2 is formed in the single hetero interface. In this study, the effective mass is estimated to be 0.074m0, corresponding to the 1st subband by the Shubnikov-de Haas effect at different temperatures. It can be clarified experimentally that the effective mass of the 1st subband is almost equal to the electron-mass in bulk InP. The energy difference between the Fermi level and the 1st subband is obtained as 5.8 meV, which is lower than the energy separation between the 1st and 2nd subbands.

Original languageEnglish
Pages (from-to)L1085-L1088
JournalJapanese Journal of Applied Physics
Issue number8 SUPPL. B
Publication statusPublished - 1997 Aug 15


  • InP/InAlAs
  • Quantum Hall effect
  • SdH oscillation
  • Single quantum well
  • Type II heterostructure


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