Transport properties in InP/InAlAs type II single heterostructure

Hiroshi Matsui; Masaki Narushima; Yasuhiro Iuima; Yuichi Kawamura; Naohisa Inoue; Hidetoshi Iwamura; Satoshi Endo; Hiroshi Uozaki; Naoki Toyota

doi:10.1143/jjap.36.l1085

Transport properties in InP/InAlAs type II single heterostructure

Hiroshi Matsui, Masaki Narushima, Yasuhiro Iuima, Yuichi Kawamura, Naohisa Inoue, Hidetoshi Iwamura, Satoshi Endo, Hiroshi Uozaki, Naoki Toyota

SCI - Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A type II interface is formed in an undoped InP/InAlAs single heterostructure grown by gas source molecular beam epitaxy. From measurements of the electrical resistivity, magnetoresistance and Hall effect, it is confirmed that a two-dimensional electron gas system containing a sheet carrier concentration of 1.8 × 10¹¹ cm^-2 is formed in the single hetero interface. In this study, the effective mass is estimated to be 0.074m₀, corresponding to the 1st subband by the Shubnikov-de Haas effect at different temperatures. It can be clarified experimentally that the effective mass of the 1st subband is almost equal to the electron-mass in bulk InP. The energy difference between the Fermi level and the 1st subband is obtained as 5.8 meV, which is lower than the energy separation between the 1st and 2nd subbands.

Original language	English
Pages (from-to)	L1085-L1088
Journal	Japanese Journal of Applied Physics
Volume	36
Issue number	8 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.l1085
Publication status	Published - 1997 Aug 15

Keywords

InP/InAlAs
Quantum Hall effect
SdH oscillation
Single quantum well
Type II heterostructure

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10.1143/jjap.36.l1085

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title = "Transport properties in InP/InAlAs type II single heterostructure",

abstract = "A type II interface is formed in an undoped InP/InAlAs single heterostructure grown by gas source molecular beam epitaxy. From measurements of the electrical resistivity, magnetoresistance and Hall effect, it is confirmed that a two-dimensional electron gas system containing a sheet carrier concentration of 1.8 × 1011 cm-2 is formed in the single hetero interface. In this study, the effective mass is estimated to be 0.074m0, corresponding to the 1st subband by the Shubnikov-de Haas effect at different temperatures. It can be clarified experimentally that the effective mass of the 1st subband is almost equal to the electron-mass in bulk InP. The energy difference between the Fermi level and the 1st subband is obtained as 5.8 meV, which is lower than the energy separation between the 1st and 2nd subbands.",

keywords = "InP/InAlAs, Quantum Hall effect, SdH oscillation, Single quantum well, Type II heterostructure",

author = "Hiroshi Matsui and Masaki Narushima and Yasuhiro Iuima and Yuichi Kawamura and Naohisa Inoue and Hidetoshi Iwamura and Satoshi Endo and Hiroshi Uozaki and Naoki Toyota",

year = "1997",

month = aug,

day = "15",

doi = "10.1143/jjap.36.l1085",

language = "English",

volume = "36",

pages = "L1085--L1088",

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T1 - Transport properties in InP/InAlAs type II single heterostructure

AU - Matsui, Hiroshi

AU - Narushima, Masaki

AU - Iuima, Yasuhiro

AU - Kawamura, Yuichi

AU - Inoue, Naohisa

AU - Iwamura, Hidetoshi

AU - Endo, Satoshi

AU - Uozaki, Hiroshi

AU - Toyota, Naoki

PY - 1997/8/15

Y1 - 1997/8/15

N2 - A type II interface is formed in an undoped InP/InAlAs single heterostructure grown by gas source molecular beam epitaxy. From measurements of the electrical resistivity, magnetoresistance and Hall effect, it is confirmed that a two-dimensional electron gas system containing a sheet carrier concentration of 1.8 × 1011 cm-2 is formed in the single hetero interface. In this study, the effective mass is estimated to be 0.074m0, corresponding to the 1st subband by the Shubnikov-de Haas effect at different temperatures. It can be clarified experimentally that the effective mass of the 1st subband is almost equal to the electron-mass in bulk InP. The energy difference between the Fermi level and the 1st subband is obtained as 5.8 meV, which is lower than the energy separation between the 1st and 2nd subbands.

AB - A type II interface is formed in an undoped InP/InAlAs single heterostructure grown by gas source molecular beam epitaxy. From measurements of the electrical resistivity, magnetoresistance and Hall effect, it is confirmed that a two-dimensional electron gas system containing a sheet carrier concentration of 1.8 × 1011 cm-2 is formed in the single hetero interface. In this study, the effective mass is estimated to be 0.074m0, corresponding to the 1st subband by the Shubnikov-de Haas effect at different temperatures. It can be clarified experimentally that the effective mass of the 1st subband is almost equal to the electron-mass in bulk InP. The energy difference between the Fermi level and the 1st subband is obtained as 5.8 meV, which is lower than the energy separation between the 1st and 2nd subbands.

KW - InP/InAlAs

KW - Quantum Hall effect

KW - SdH oscillation

KW - Single quantum well

KW - Type II heterostructure

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SN - 0021-4922

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SP - L1085-L1088

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8 SUPPL. B

ER -

Transport properties in InP/InAlAs type II single heterostructure

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Keywords

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