Transport properties of a nanotube-based transistor

K. Esfarjani, A. A. Farajian, F. Ebrahimi, Y. Kawazoe

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Transport properties of doped nanotube-based double junctions forming a nanotransistor and investigated within the tight binding formalism. The effects of doping gate length and gate soften have been considered. It is found that in addition to the importance of rotational symmetry in determining transport properties, large gains can be achieved for semiconducting doped tubes.

Original languageEnglish
Pages (from-to)353-355
Number of pages3
JournalEuropean Physical Journal D
Issue number3
Publication statusPublished - 2001 Sept


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