Abstract
Transport properties of doped nanotube-based double junctions forming a nanotransistor and investigated within the tight binding formalism. The effects of doping gate length and gate soften have been considered. It is found that in addition to the importance of rotational symmetry in determining transport properties, large gains can be achieved for semiconducting doped tubes.
| Original language | English |
|---|---|
| Pages (from-to) | 353-355 |
| Number of pages | 3 |
| Journal | European Physical Journal D |
| Volume | 8 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2001 Sept |