TY - JOUR
T1 - Transport properties of a single pair of coupled self-assembled InAs quantum dots
AU - Ota, T.
AU - Hatano, T.
AU - Tarucha, S.
AU - Song, H. Z.
AU - Nakata, Y.
AU - Miyazawa, T.
AU - Ohshima, T.
AU - Yokoyama, N.
N1 - Funding Information:
The authors thank K. Ono, T. Sato, T. Inoshita, W. Izumida, M. Stopa, T. Yamaguchi, K. Yamada and S. Teraoka for valuable discussions. The authors acknowledge financial supports from the Specially Promoted Research, Grant-in-Aid for Scientific Research, from the Ministry of Education, Science and Culture in Japan, and from CREST-JST and Nano-Photonic and Electron Devices Technology Project, Focused Research and Development Project for the Realization of the World's Most Advanced IT Nation.
PY - 2003/7
Y1 - 2003/7
N2 - Electron transport properties of a single pair of strongly and weakly coupled self-assembled InAs quantum dots are investigated using a single electron spectroscopy technique. We fabricated vertical single electron transistors containing just a few pairs of vertically coupled two InAs dot layers embedded in a GaAs matrix. The transport through a single pair of the coupled dots is observed near the pinch-off point of the devices. Thus, observed Coulomb oscillations and Coulomb diamonds show the characteristics just like a single dot for the strongly coupled dots, whereas those for the weakly coupled dots show the irregular features due to the localization of electrons in each dot. In case more than one pair of the coupled dots contributed to the transport, the parallel conduction is proved by observation of two families of Coulomb diamonds.
AB - Electron transport properties of a single pair of strongly and weakly coupled self-assembled InAs quantum dots are investigated using a single electron spectroscopy technique. We fabricated vertical single electron transistors containing just a few pairs of vertically coupled two InAs dot layers embedded in a GaAs matrix. The transport through a single pair of the coupled dots is observed near the pinch-off point of the devices. Thus, observed Coulomb oscillations and Coulomb diamonds show the characteristics just like a single dot for the strongly coupled dots, whereas those for the weakly coupled dots show the irregular features due to the localization of electrons in each dot. In case more than one pair of the coupled dots contributed to the transport, the parallel conduction is proved by observation of two families of Coulomb diamonds.
KW - Artificial molecule
KW - Coulomb oscillation
KW - Coupled quantum dots
KW - InAs self-assembled quantum dots
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U2 - 10.1016/S1386-9477(03)00318-7
DO - 10.1016/S1386-9477(03)00318-7
M3 - Conference article
AN - SCOPUS:0042922738
SN - 1386-9477
VL - 19
SP - 210
EP - 214
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-2
T2 - Fourth International Symposium on Nanostructures and Mesoscopi
Y2 - 17 February 2003 through 21 February 2003
ER -