Transport properties of closely-packed carbon nanotubes film on SiC tuned by Si-doping

Wataru Norimatsu, Takehiro Maruyama, Kenta Yoshida, Koichi Takase, Michiko Kusunoki

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Here, we reveal origins of the planar electrical transport of closely-packed carbon nanotubes (CNTs) and silicon-doped CNTs (Si-CNTs) films. Their electrical resistivities increased with decreasing temperature, but exhibit a plateau below 60 K. This phenomenon can be well described using the simple-two-band model, which is often used to understand the electronic properties of graphite. Cryogenic energy-filtered transmission electron microscopy visualizes Si atoms dispersed finely in CNTs, preserving the structural features of CNTs. These Si atoms induced effective carriers above 150 K, while three-dimensional variable range hopping and weak localization are dominant in their transport below 50 and 10 K, respectively.

Original languageEnglish
Article number105102
JournalApplied Physics Express
Issue number10
Publication statusPublished - 2012 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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