Transport Properties of Parallel Multiple Ballistic Point Contacts

Yoshiro Hirayama, Tadashi Saku

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Parallel multiple ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. The fabricated structure is controlled by a single Schottky gate electrode placed upon it. Quantized currents of µA order are obtained in the fabricated structures.

Original languageEnglish
Pages (from-to)L368-L370
JournalJapanese Journal of Applied Physics
Issue number2
Publication statusPublished - 1990 Feb


  • AIGaAs
  • Ballistic point contact
  • Field-effect
  • Focused ion beam
  • GaAs
  • One-dimensional channel
  • Transistor


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