Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

G. Yusa; H. Sakaki

doi:10.1063/1.119068

Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

G. Yusa, H. Sakaki

SCI - Physics

Research output: Contribution to journal › Article › peer-review

223 Citations (Scopus)

Abstract

The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration N_s of two dimensional electrons at a given gate voltage V_g is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the N_s-V_g characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested.

Original language	English
Pages (from-to)	345-347
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	3
DOIs	https://doi.org/10.1063/1.119068
Publication status	Published - 1997 Jan 20

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@article{f211f0a03058478ab9aa59773fc7c21e,

title = "Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures",

abstract = "The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested.",

author = "G. Yusa and H. Sakaki",

year = "1997",

month = jan,

day = "20",

doi = "10.1063/1.119068",

language = "English",

volume = "70",

pages = "345--347",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

AU - Yusa, G.

AU - Sakaki, H.

PY - 1997/1/20

Y1 - 1997/1/20

N2 - The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested.

AB - The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested.

UR - http://www.scopus.com/inward/record.url?scp=0000217515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000217515&partnerID=8YFLogxK

U2 - 10.1063/1.119068

DO - 10.1063/1.119068

M3 - Article

AN - SCOPUS:0000217515

SN - 0003-6951

VL - 70

SP - 345

EP - 347

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

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