Interaction between semiconductor carrier waves and slow electromagnetic waves is investigated theoretically and experimentally. The theoretical analysis shows that transverse carrier confinement by suitable structures reduces carrier diffusion loss and enhances the interaction. Experimental carrier confinement by a thin GaAs layer and by a selectively doped AlGaAs/GaAs heterostructure indicates the presence of strong traveling wave interaction.
|Title of host publication||Institute of Physics Conference Series|
|Number of pages||6|
|Publication status||Published - 1986 Dec 1|
|Name||Institute of Physics Conference Series|
ASJC Scopus subject areas
- Physics and Astronomy(all)