TRAVELLING WAVE INTERACTIONS IN GaAS AND AlGaAs/GaAs LAYERS.

Kouichi Iizuka; Hideki Hasegawa; Hideo Ohno; Naokatsu Sano

TRAVELLING WAVE INTERACTIONS IN GaAS AND AlGaAs/GaAs LAYERS.

Kouichi Iizuka, Hideki Hasegawa, Hideo Ohno, Naokatsu Sano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Interaction between semiconductor carrier waves and slow electromagnetic waves is investigated theoretically and experimentally. The theoretical analysis shows that transverse carrier confinement by suitable structures reduces carrier diffusion loss and enhances the interaction. Experimental carrier confinement by a thin GaAs layer and by a selectively doped AlGaAs/GaAs heterostructure indicates the presence of strong traveling wave interaction.

Original language	English
Title of host publication	Institute of Physics Conference Series
Pages	577-582
Number of pages	6
Edition	79
Publication status	Published - 1986 Dec 1
Externally published	Yes

Publication series

Name	Institute of Physics Conference Series
Number	79
ISSN (Print)	0373-0751

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

@inproceedings{0aef3e566dbf4faabc2a62afb57f97ae,

title = "TRAVELLING WAVE INTERACTIONS IN GaAS AND AlGaAs/GaAs LAYERS.",

abstract = "Interaction between semiconductor carrier waves and slow electromagnetic waves is investigated theoretically and experimentally. The theoretical analysis shows that transverse carrier confinement by suitable structures reduces carrier diffusion loss and enhances the interaction. Experimental carrier confinement by a thin GaAs layer and by a selectively doped AlGaAs/GaAs heterostructure indicates the presence of strong traveling wave interaction.",

author = "Kouichi Iizuka and Hideki Hasegawa and Hideo Ohno and Naokatsu Sano",

year = "1986",

month = dec,

day = "1",

language = "English",

isbn = "0854981705",

series = "Institute of Physics Conference Series",

number = "79",

pages = "577--582",

booktitle = "Institute of Physics Conference Series",

edition = "79",

}

TY - GEN

T1 - TRAVELLING WAVE INTERACTIONS IN GaAS AND AlGaAs/GaAs LAYERS.

AU - Iizuka, Kouichi

AU - Hasegawa, Hideki

AU - Ohno, Hideo

AU - Sano, Naokatsu

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Interaction between semiconductor carrier waves and slow electromagnetic waves is investigated theoretically and experimentally. The theoretical analysis shows that transverse carrier confinement by suitable structures reduces carrier diffusion loss and enhances the interaction. Experimental carrier confinement by a thin GaAs layer and by a selectively doped AlGaAs/GaAs heterostructure indicates the presence of strong traveling wave interaction.

AB - Interaction between semiconductor carrier waves and slow electromagnetic waves is investigated theoretically and experimentally. The theoretical analysis shows that transverse carrier confinement by suitable structures reduces carrier diffusion loss and enhances the interaction. Experimental carrier confinement by a thin GaAs layer and by a selectively doped AlGaAs/GaAs heterostructure indicates the presence of strong traveling wave interaction.

UR - http://www.scopus.com/inward/record.url?scp=0023005016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023005016&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023005016

SN - 0854981705

T3 - Institute of Physics Conference Series

SP - 577

EP - 582

BT - Institute of Physics Conference Series

ER -

TRAVELLING WAVE INTERACTIONS IN GaAS AND AlGaAs/GaAs LAYERS.

Abstract

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ASJC Scopus subject areas

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