In this paper low stress silicon oxide was deposited with tetraethylorthosilicate (TEOS, Si(OC2H5) 4)/ozone by plasma enhanced chemical vapor deposition (PECVD) and sub-atmospheric chemical vapor deposition (SACVD) for deep trench filling. Two kinds of PECVD oxide were fabricated: Coil antenna inductively coupled plasma (ICP) oxide and parallel plates capacitive coupled plasma (CCP) oxide. Adding ozone into the deposition process enhances the trench filling capability. Oxide filling in a deep trench (5 μm wide, 52 μm deep) was carried out using the SACVD process, which gave excellent conformal step coverage. However, the coil antenna ICP oxide was suitable as a sealing material. The effects of argon ion sputtering and magnetic field in the PECVD for the trench filling are discussed in this paper. Because the low temperature processes of PECVD and SACVD, the thermal residual stress was reduced and a low stress film of 85 MPa compression is available.
|Number of pages||6|
|Publication status||Published - 2004 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Hardware and Architecture
- Electrical and Electronic Engineering