Trench filling characteristics of low stress TEOS/ozone oxide deposited by PECVD and SACVD

C. Chang; T. Abe; M. Esashi

doi:10.1007/s00542-003-0313-z

Trench filling characteristics of low stress TEOS/ozone oxide deposited by PECVD and SACVD

C. Chang, T. Abe, M. Esashi

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

In this paper low stress silicon oxide was deposited with tetraethylorthosilicate (TEOS, Si(OC₂H₅) ₄)/ozone by plasma enhanced chemical vapor deposition (PECVD) and sub-atmospheric chemical vapor deposition (SACVD) for deep trench filling. Two kinds of PECVD oxide were fabricated: Coil antenna inductively coupled plasma (ICP) oxide and parallel plates capacitive coupled plasma (CCP) oxide. Adding ozone into the deposition process enhances the trench filling capability. Oxide filling in a deep trench (5 μm wide, 52 μm deep) was carried out using the SACVD process, which gave excellent conformal step coverage. However, the coil antenna ICP oxide was suitable as a sealing material. The effects of argon ion sputtering and magnetic field in the PECVD for the trench filling are discussed in this paper. Because the low temperature processes of PECVD and SACVD, the thermal residual stress was reduced and a low stress film of 85 MPa compression is available.

Original language	English
Pages (from-to)	97-102
Number of pages	6
Journal	Microsystem Technologies
Volume	10
Issue number	2
DOIs	https://doi.org/10.1007/s00542-003-0313-z
Publication status	Published - 2004 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Hardware and Architecture
Electrical and Electronic Engineering

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title = "Trench filling characteristics of low stress TEOS/ozone oxide deposited by PECVD and SACVD",

abstract = "In this paper low stress silicon oxide was deposited with tetraethylorthosilicate (TEOS, Si(OC2H5) 4)/ozone by plasma enhanced chemical vapor deposition (PECVD) and sub-atmospheric chemical vapor deposition (SACVD) for deep trench filling. Two kinds of PECVD oxide were fabricated: Coil antenna inductively coupled plasma (ICP) oxide and parallel plates capacitive coupled plasma (CCP) oxide. Adding ozone into the deposition process enhances the trench filling capability. Oxide filling in a deep trench (5 μm wide, 52 μm deep) was carried out using the SACVD process, which gave excellent conformal step coverage. However, the coil antenna ICP oxide was suitable as a sealing material. The effects of argon ion sputtering and magnetic field in the PECVD for the trench filling are discussed in this paper. Because the low temperature processes of PECVD and SACVD, the thermal residual stress was reduced and a low stress film of 85 MPa compression is available.",

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AU - Chang, C.

AU - Abe, T.

AU - Esashi, M.

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N2 - In this paper low stress silicon oxide was deposited with tetraethylorthosilicate (TEOS, Si(OC2H5) 4)/ozone by plasma enhanced chemical vapor deposition (PECVD) and sub-atmospheric chemical vapor deposition (SACVD) for deep trench filling. Two kinds of PECVD oxide were fabricated: Coil antenna inductively coupled plasma (ICP) oxide and parallel plates capacitive coupled plasma (CCP) oxide. Adding ozone into the deposition process enhances the trench filling capability. Oxide filling in a deep trench (5 μm wide, 52 μm deep) was carried out using the SACVD process, which gave excellent conformal step coverage. However, the coil antenna ICP oxide was suitable as a sealing material. The effects of argon ion sputtering and magnetic field in the PECVD for the trench filling are discussed in this paper. Because the low temperature processes of PECVD and SACVD, the thermal residual stress was reduced and a low stress film of 85 MPa compression is available.

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Trench filling characteristics of low stress TEOS/ozone oxide deposited by PECVD and SACVD

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