This paper discusses two new kinds of micromagnetoelastic devices made on silicon wafer whose function is to control the permeability of magnetostrictive soft magnetic thin films by voltage-controlled elastic strain. One is piezoelectric type and the other is electrostatic type. Structure, fabrication process, characteristics, and maximum possible output are discussed. The feasibility of these devices has been clarified although the rate of obtained permeability change was less than 1%. These device characteristics could be improved to 11% for piezoelectric type and to 80% for electrostatic type by the optimization of device dimensions and reduction of process damage to the magnetic film.