@inproceedings{8afa26e8094b4bdbb80ac1dac8f8a29b,
title = "TSV liner dielectric technology with spin-on low-k polymer",
abstract = "In this paper, a BCB (benzocyclobutene) resin is employed as a spin-on low-k polymer for TSV liner dielectrics. The BCB is perfectly covered on the sidewall of deep Si holes with a diameter of 8 μm and depth of 40 μm (aspect ratio: 5). The step coverage of the BCB is high and controllable by conditioning the spin rotation speed, spin-coating time, and deforming pressure to eliminate bubbles formed in the deep Si holes prior to spin-coating. Cu-TSVs with the BCB liner dielectric are successfully formed by the subsequent electro-less plated and electroplated Cu technologies. This cost-effective spin-on BCB technology will be applied to via-last TSV fabrication at low temperature below 250 C to give low-capacitance TSVs.",
keywords = "3D integration, BCB, Low capacitance, Spin coating, TSV",
author = "S. Lee and Y. Sugawara and M. Ito and H. Kino and T. Fukushima and T. Tanaka",
note = "Publisher Copyright: {\textcopyright} 2018 Japan Institute of Electronics Packaging.; 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 ; Conference date: 17-04-2018 Through 21-04-2018",
year = "2018",
month = jun,
day = "6",
doi = "10.23919/ICEP.2018.8374320",
language = "English",
series = "2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "346--349",
booktitle = "2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018",
address = "United States",
}