@article{fea93ef04f3f4f5d8bb5d64b265209ae,
title = "Tunable Dual-Wavelength Heterogeneous Quantum Dot Laser Diode with a Silicon External Cavity",
abstract = "We propose a tunable dual-wavelength heterogeneous quantum dot laser diode. The tunable dual-wavelength laser consists of a quantum dot semiconductor optical amplifier as the optical gain medium and an external cavity fabricated from silicon photonics technology as the wavelength tunable filter. We successfully demonstrated dual-wavelength lasing oscillation by tuning the difference frequency from approximately 34 to 400 GHz.",
keywords = "Quantum dot laser, semiconductor laser, silicon photonics",
author = "Tomohiro Kita and Atsushi Matsumoto and Naokatsu Yamamoto and Hirohito Yamada",
note = "Funding Information: Manuscript received July 1, 2017; revised August 29, 2017; accepted September 4, 2017. Date of publication September 17, 2017; date of current version February 24, 2018. This work was supported in part by the Strategic Information and Communications R&D Promotion Program (SCOPE) #142102003 of the Ministry of Internal Affairs, Japan, and in part by the “R&D project on carrier-conversion technology with high environmental tolerance research and system demonstration on high capacity O/E and E/O carrier-conversion technology for next generation wireless and wired networks” of the Commissioned Research of National Institute of Information and Communications Technology, Japan. (Corresponding Author: Tomohiro Kita.) T. Kita and H. Yamada are with the Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan (e-mail: tkita@ecei.tohoku.ac.jp; yamada@ ecei.tohoku.ac.jp). Publisher Copyright: {\textcopyright} 1983-2012 IEEE.",
year = "2018",
month = jan,
day = "15",
doi = "10.1109/JLT.2017.2752211",
language = "English",
volume = "36",
pages = "219--224",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}