Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

N. Dyakonova; A. El Fatimy; Y. Meziani; T. Otsuji; D. Coquillat; W. Knap; F. Teppe; S. Vandenbrouk; K. Madjour; D. Théron; C. Gaquiere; M. A. Poisson; S. Delage

doi:10.1109/ICIMW.2010.5612620

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

N. Dyakonova, A. El Fatimy, Y. Meziani, T. Otsuji, D. Coquillat, W. Knap, F. Teppe, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage

RIEC - Information Communication Platforms Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

Original language	English
Title of host publication	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs	https://doi.org/10.1109/ICIMW.2010.5612620
Publication status	Published - 2010
Event	35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy Duration: 2010 Sept 5 → 2010 Sept 10

Publication series

Name	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Conference

Conference	35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
Country/Territory	Italy
City	Rome
Period	10/9/5 → 10/9/10

Access to Document

10.1109/ICIMW.2010.5612620

Cite this

Dyakonova, N., El Fatimy, A., Meziani, Y., Otsuji, T., Coquillat, D., Knap, W., Teppe, F., Vandenbrouk, S., Madjour, K., Théron, D., Gaquiere, C., Poisson, M. A., & Delage, S. (2010). Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide Article 5612620 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). https://doi.org/10.1109/ICIMW.2010.5612620

Dyakonova, N. ; El Fatimy, A. ; Meziani, Y. et al. / Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors. IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide).

@inproceedings{47a3143d87354b24aadaccd0deb88dd7,

title = "Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors",

abstract = "We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.",

author = "N. Dyakonova and {El Fatimy}, A. and Y. Meziani and T. Otsuji and D. Coquillat and W. Knap and F. Teppe and S. Vandenbrouk and K. Madjour and D. Th{\'e}ron and C. Gaquiere and Poisson, {M. A.} and S. Delage",

note = "Funding Information: The authors are grateful to the Companhia Bai-ana de Pesquisa Mineral (CBPM), for financial support of this research. Funding was provided by the Conselho de Desenvolvimento Cient{\'i}fico e Tec-nol{\'o}gico CNPq (Process no. 52192/97-6 and 301392/00-5) and by the Funda{\c c}{\~a}o Coordena{\c c}{\~a}o de Aperfei{\c c}oamento do Pessoal do Ensino Superior (CAPES) as a doctoral grant (DCR, process BEX1332-98/8). I. McReath thanks CNPq for his research fellowship (Process no. 3020038/81-7). We thank the staff of the Jack Satterly Geochronological Laboratory, Par{\'a}-Iso Laboratory, and McMaster University for assistance and encouragement throughout the work, and particularly S. Kamo, Y. Y. Kwok, and C. Jager for their guidance of D. C. Rios. This paper is contribution number 106 from the Applied Petrology Research Group of the Geociences Institute of the Federal University of Bahia.; 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 ; Conference date: 05-09-2010 Through 10-09-2010",

year = "2010",

doi = "10.1109/ICIMW.2010.5612620",

language = "English",

isbn = "9781424466573",

series = "IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide",

booktitle = "IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide",

}

Dyakonova, N, El Fatimy, A, Meziani, Y, Otsuji, T, Coquillat, D, Knap, W, Teppe, F, Vandenbrouk, S, Madjour, K, Théron, D, Gaquiere, C, Poisson, MA & Delage, S 2010, Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors. in IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide., 5612620, IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010, Rome, Italy, 10/9/5. https://doi.org/10.1109/ICIMW.2010.5612620

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors. / Dyakonova, N.; El Fatimy, A.; Meziani, Y. et al.
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. 5612620 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

AU - Dyakonova, N.

AU - El Fatimy, A.

AU - Meziani, Y.

AU - Otsuji, T.

AU - Coquillat, D.

AU - Knap, W.

AU - Teppe, F.

AU - Vandenbrouk, S.

AU - Madjour, K.

AU - Théron, D.

AU - Gaquiere, C.

AU - Poisson, M. A.

AU - Delage, S.

N1 - Funding Information: The authors are grateful to the Companhia Bai-ana de Pesquisa Mineral (CBPM), for financial support of this research. Funding was provided by the Conselho de Desenvolvimento Científico e Tec-nológico CNPq (Process no. 52192/97-6 and 301392/00-5) and by the Fundação Coordenação de Aperfeiçoamento do Pessoal do Ensino Superior (CAPES) as a doctoral grant (DCR, process BEX1332-98/8). I. McReath thanks CNPq for his research fellowship (Process no. 3020038/81-7). We thank the staff of the Jack Satterly Geochronological Laboratory, Pará-Iso Laboratory, and McMaster University for assistance and encouragement throughout the work, and particularly S. Kamo, Y. Y. Kwok, and C. Jager for their guidance of D. C. Rios. This paper is contribution number 106 from the Applied Petrology Research Group of the Geociences Institute of the Federal University of Bahia.

PY - 2010

Y1 - 2010

N2 - We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

AB - We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

UR - http://www.scopus.com/inward/record.url?scp=78649354479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649354479&partnerID=8YFLogxK

U2 - 10.1109/ICIMW.2010.5612620

DO - 10.1109/ICIMW.2010.5612620

M3 - Conference contribution

AN - SCOPUS:78649354479

SN - 9781424466573

T3 - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

BT - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

T2 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010

Y2 - 5 September 2010 through 10 September 2010

ER -

Dyakonova N, El Fatimy A, Meziani Y, Otsuji T, Coquillat D, Knap W et al. Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. 5612620. (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). doi: 10.1109/ICIMW.2010.5612620

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this