We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.
|Journal||Applied Physics Letters|
|Publication status||Published - 2010 Oct 4|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)