Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

S. Asanuma; P. H. Xiang; H. Yamada; H. Sato; I. H. Inoue; H. Akoh; A. Sawa; K. Ueno; H. Shimotani; H. Yuan; M. Kawasaki; Y. Iwasa

doi:10.1063/1.3496458

Tuning of the metal-insulator transition in electrolyte-gated NdNiO ₃ thin films

S. Asanuma, P. H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, Y. Iwasa

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Abstract

We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO₃ through a large effective capacitance of the electric double layer at the electrolyte/NdNiO ₃ interface. The metal-insulator transition temperature (TMI) of NdNiO₃ is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V _G). The shift in TMI (Δ TMI) is larger for thinner NdNiO ₃; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO₃ is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

Original language	English
Article number	142110
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3496458
Publication status	Published - 2010 Oct 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3496458

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@article{3fead43bc42b4f5580697a1dafd0017e,

title = "Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films",

abstract = "We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.",

author = "S. Asanuma and Xiang, {P. H.} and H. Yamada and H. Sato and Inoue, {I. H.} and H. Akoh and A. Sawa and K. Ueno and H. Shimotani and H. Yuan and M. Kawasaki and Y. Iwasa",

note = "Funding Information: This work was supported in part by Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program) of JSPS, Grant-in-Aid for Scientific Research (Grant Nos. 21560707 and 22360280), and Grant-in-Aid for Young Scientists (Grant No. 21750198). The authors thank C. Panagopoulos for critical reading of the manuscript. ",

year = "2010",

month = oct,

day = "4",

doi = "10.1063/1.3496458",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

AU - Asanuma, S.

AU - Xiang, P. H.

AU - Yamada, H.

AU - Sato, H.

AU - Inoue, I. H.

AU - Akoh, H.

AU - Sawa, A.

AU - Ueno, K.

AU - Shimotani, H.

AU - Yuan, H.

AU - Kawasaki, M.

AU - Iwasa, Y.

N1 - Funding Information: This work was supported in part by Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program) of JSPS, Grant-in-Aid for Scientific Research (Grant Nos. 21560707 and 22360280), and Grant-in-Aid for Young Scientists (Grant No. 21750198). The authors thank C. Panagopoulos for critical reading of the manuscript.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

AB - We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

UR - http://www.scopus.com/inward/record.url?scp=77958036049&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958036049&partnerID=8YFLogxK

U2 - 10.1063/1.3496458

DO - 10.1063/1.3496458

M3 - Article

AN - SCOPUS:77958036049

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142110

ER -

Tuning of the metal-insulator transition in electrolyte-gated NdNiO ₃ thin films

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