Tunnel anisotropic magnetoresistance in magnetic tunnel junctions using FeAlSi

S. Akamatsu; T. Nakano; Muftah Al-Mahdawi; W. Yupeng; M. Tsunoda; Y. Ando; M. Oogane

doi:10.1063/9.0000440

Tunnel anisotropic magnetoresistance in magnetic tunnel junctions using FeAlSi

S. Akamatsu, T. Nakano, Muftah Al-Mahdawi, W. Yupeng, M. Tsunoda, Y. Ando, M. Oogane

Research output: Contribution to journal › Article › peer-review

Abstract

We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties at low temperature. We observed TMR ratio increase with temperature decrease, and confirmed the TMR ratio of 179.9% at 10 K. The conductance dependence on bias voltage was measured, and a clear peak at low bias voltage similar to Fe/MgO/Fe MTJs was observed. This behavior can be explained by considering the majority band of Fe(001), and Δ5 electrons tunneling in FeAlSi/MgO/CoFeB MTJs at low bias voltage. We also investigated tunnel anisotropic magneto-resistance (TAMR) and clearly observed a TAMR peak similar to Fe/MgO/Fe MTJs, where the TAMR ratio of FeAlSi/MgO/CoFeB MTJs was 1.0% comparable to 1.1% in Fe/MgO/Fe MTJs. We concluded that electron tunneling was caused by the interfacial resonance states originating from spin orbit coupling in the FeAlSi/MgO/CoFeB MTJs.

Original language	English
Article number	025005
Journal	AIP Advances
Volume	13
Issue number	2
DOIs	https://doi.org/10.1063/9.0000440
Publication status	Published - 2023 Feb 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Tunnel anisotropic magnetoresistance in magnetic tunnel junctions using FeAlSi",

abstract = "We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties at low temperature. We observed TMR ratio increase with temperature decrease, and confirmed the TMR ratio of 179.9% at 10 K. The conductance dependence on bias voltage was measured, and a clear peak at low bias voltage similar to Fe/MgO/Fe MTJs was observed. This behavior can be explained by considering the majority band of Fe(001), and Δ5 electrons tunneling in FeAlSi/MgO/CoFeB MTJs at low bias voltage. We also investigated tunnel anisotropic magneto-resistance (TAMR) and clearly observed a TAMR peak similar to Fe/MgO/Fe MTJs, where the TAMR ratio of FeAlSi/MgO/CoFeB MTJs was 1.0% comparable to 1.1% in Fe/MgO/Fe MTJs. We concluded that electron tunneling was caused by the interfacial resonance states originating from spin orbit coupling in the FeAlSi/MgO/CoFeB MTJs.",

author = "S. Akamatsu and T. Nakano and Muftah Al-Mahdawi and W. Yupeng and M. Tsunoda and Y. Ando and M. Oogane",

note = "Funding Information: This work was supported by Japan Society for the Promotion of Science (JSPS), Japan Science and Technology Agency (JST) S-Innovation program, NEDO leading project, the Center for Science and Innovation in Spintronics (CSIS, Tohoku University), GP-Spin at Tohoku University. Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

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doi = "10.1063/9.0000440",

language = "English",

volume = "13",

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T1 - Tunnel anisotropic magnetoresistance in magnetic tunnel junctions using FeAlSi

AU - Akamatsu, S.

AU - Nakano, T.

AU - Al-Mahdawi, Muftah

AU - Yupeng, W.

AU - Tsunoda, M.

AU - Ando, Y.

AU - Oogane, M.

N1 - Funding Information: This work was supported by Japan Society for the Promotion of Science (JSPS), Japan Science and Technology Agency (JST) S-Innovation program, NEDO leading project, the Center for Science and Innovation in Spintronics (CSIS, Tohoku University), GP-Spin at Tohoku University. Publisher Copyright: © 2023 Author(s).

PY - 2023/2/1

Y1 - 2023/2/1

N2 - We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties at low temperature. We observed TMR ratio increase with temperature decrease, and confirmed the TMR ratio of 179.9% at 10 K. The conductance dependence on bias voltage was measured, and a clear peak at low bias voltage similar to Fe/MgO/Fe MTJs was observed. This behavior can be explained by considering the majority band of Fe(001), and Δ5 electrons tunneling in FeAlSi/MgO/CoFeB MTJs at low bias voltage. We also investigated tunnel anisotropic magneto-resistance (TAMR) and clearly observed a TAMR peak similar to Fe/MgO/Fe MTJs, where the TAMR ratio of FeAlSi/MgO/CoFeB MTJs was 1.0% comparable to 1.1% in Fe/MgO/Fe MTJs. We concluded that electron tunneling was caused by the interfacial resonance states originating from spin orbit coupling in the FeAlSi/MgO/CoFeB MTJs.

AB - We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties at low temperature. We observed TMR ratio increase with temperature decrease, and confirmed the TMR ratio of 179.9% at 10 K. The conductance dependence on bias voltage was measured, and a clear peak at low bias voltage similar to Fe/MgO/Fe MTJs was observed. This behavior can be explained by considering the majority band of Fe(001), and Δ5 electrons tunneling in FeAlSi/MgO/CoFeB MTJs at low bias voltage. We also investigated tunnel anisotropic magneto-resistance (TAMR) and clearly observed a TAMR peak similar to Fe/MgO/Fe MTJs, where the TAMR ratio of FeAlSi/MgO/CoFeB MTJs was 1.0% comparable to 1.1% in Fe/MgO/Fe MTJs. We concluded that electron tunneling was caused by the interfacial resonance states originating from spin orbit coupling in the FeAlSi/MgO/CoFeB MTJs.

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Tunnel anisotropic magnetoresistance in magnetic tunnel junctions using FeAlSi

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