Tunnel magnetoresistance effect in CoFeB/MgO/Co2FeSi and Co2MnSi tunnel junctions

T. Daibou; M. Shinano; M. Hattori; Y. Sakuraba; M. Oogane; Y. Ando; T. Miyazaki

doi:10.1109/TMAG.2006.879733

Tunnel magnetoresistance effect in CoFeB/MgO/Co₂FeSi and Co₂MnSi tunnel junctions

T. Daibou, M. Shinano, M. Hattori, Y. Sakuraba, M. Oogane, Y. Ando, T. Miyazaki

ENG - Applied Physics

Tohoku University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have fabricated MgO-based magnetic tunnel junctions (MTJs) with the CoFeB bottom electrode and top electrodes of poly crystalline Co₂FeSi and Co₂MnSi Heusler alloys. We have measured temperature dependence of the TMR ratio and TMR-V characteristics at 6 K. We have achieved a high TMR ratio of 90% at RT for the MTJ with Co₂FeSi electrode after annealing at 325° C. The MTJ with Co₂MnSi electrode showed a significant annealing temperature dependence of the TMR ratio. The increase of TMR ratio by annealing is due to the crystallization of the Co₂MnSi Heusler layer. Furthermore, the strong temperature dependence of TMR ratio and the anomalous TMR-V characteristics have been observed in the MTJ with Co₂MnSi.

Original language	English
Pages (from-to)	2655-2657
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	42
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2006.879733
Publication status	Published - 2006 Oct

Keywords

CoFeB
Heusler alloys
MgO
MTJs

Access to Document

10.1109/TMAG.2006.879733

Cite this

@article{7e04d08ac2fd430d95f322235775bba3,

title = "Tunnel magnetoresistance effect in CoFeB/MgO/Co2FeSi and Co2MnSi tunnel junctions",

abstract = "We have fabricated MgO-based magnetic tunnel junctions (MTJs) with the CoFeB bottom electrode and top electrodes of poly crystalline Co2FeSi and Co2MnSi Heusler alloys. We have measured temperature dependence of the TMR ratio and TMR-V characteristics at 6 K. We have achieved a high TMR ratio of 90% at RT for the MTJ with Co2FeSi electrode after annealing at 325° C. The MTJ with Co2MnSi electrode showed a significant annealing temperature dependence of the TMR ratio. The increase of TMR ratio by annealing is due to the crystallization of the Co2MnSi Heusler layer. Furthermore, the strong temperature dependence of TMR ratio and the anomalous TMR-V characteristics have been observed in the MTJ with Co2MnSi.",

keywords = "CoFeB, Heusler alloys, MgO, MTJs",

author = "T. Daibou and M. Shinano and M. Hattori and Y. Sakuraba and M. Oogane and Y. Ando and T. Miyazaki",

year = "2006",

month = oct,

doi = "10.1109/TMAG.2006.879733",

language = "English",

volume = "42",

pages = "2655--2657",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Tunnel magnetoresistance effect in CoFeB/MgO/Co2FeSi and Co2MnSi tunnel junctions

AU - Daibou, T.

AU - Shinano, M.

AU - Hattori, M.

AU - Sakuraba, Y.

AU - Oogane, M.

AU - Ando, Y.

AU - Miyazaki, T.

PY - 2006/10

Y1 - 2006/10

N2 - We have fabricated MgO-based magnetic tunnel junctions (MTJs) with the CoFeB bottom electrode and top electrodes of poly crystalline Co2FeSi and Co2MnSi Heusler alloys. We have measured temperature dependence of the TMR ratio and TMR-V characteristics at 6 K. We have achieved a high TMR ratio of 90% at RT for the MTJ with Co2FeSi electrode after annealing at 325° C. The MTJ with Co2MnSi electrode showed a significant annealing temperature dependence of the TMR ratio. The increase of TMR ratio by annealing is due to the crystallization of the Co2MnSi Heusler layer. Furthermore, the strong temperature dependence of TMR ratio and the anomalous TMR-V characteristics have been observed in the MTJ with Co2MnSi.

AB - We have fabricated MgO-based magnetic tunnel junctions (MTJs) with the CoFeB bottom electrode and top electrodes of poly crystalline Co2FeSi and Co2MnSi Heusler alloys. We have measured temperature dependence of the TMR ratio and TMR-V characteristics at 6 K. We have achieved a high TMR ratio of 90% at RT for the MTJ with Co2FeSi electrode after annealing at 325° C. The MTJ with Co2MnSi electrode showed a significant annealing temperature dependence of the TMR ratio. The increase of TMR ratio by annealing is due to the crystallization of the Co2MnSi Heusler layer. Furthermore, the strong temperature dependence of TMR ratio and the anomalous TMR-V characteristics have been observed in the MTJ with Co2MnSi.

KW - CoFeB

KW - Heusler alloys

KW - MgO

KW - MTJs

UR - http://www.scopus.com/inward/record.url?scp=85008020462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008020462&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2006.879733

DO - 10.1109/TMAG.2006.879733

M3 - Article

AN - SCOPUS:85008020462

SN - 0018-9464

VL - 42

SP - 2655

EP - 2657

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

ER -

Tunnel magnetoresistance effect in CoFeB/MgO/Co₂FeSi and Co₂MnSi tunnel junctions

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this