Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co 2FeAl 0.5Si 0.5 Heusler electrodes on MgO (110) single substrates

N. Tezuka; F. Mitsuhashi; S. Sugimoto

doi:10.1063/1.3678586

Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co ₂FeAl _0.5Si _0.5 Heusler electrodes on MgO (110) single substrates

N. Tezuka, F. Mitsuhashi, S. Sugimoto

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Tunnel magnetoresistance effect has been investigated for magnetic tunnel junctions with Co ₂FeAl _0.5Si _0.5 Heusler electrodes on a Cr-bufferd MgO (110) substrate. The grown Co ₂FeAl _0.5Si _0.5 has L2 ₁ structure for annealing above 500°C. The TMR ratio of 73 at room temperature and 103 at 5 K were obtained for a junction consists of MgO(110) substrate/Cr/Co ₂FeAl _0.5Si _0.5/Al-oxide/Co ₇₅Fe ₂₅/IrMn/Ta. The tunnel magnetoresistance ratio obtained in this study is almost the same as that estimated by using magnetic tunnel junction with the same kind of Co ₂FeAl _0.5Si _0.5 electrode on a Cr-bufferd MgO (001) substrate. Smaller temperature dependence of magnetoresistance ratio was also found for the junctions on Cr-bufferd MgO(110) substrates.

Original language	English
Article number	07C718
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3678586
Publication status	Published - 2012 Apr 1

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title = "Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co 2FeAl 0.5Si 0.5 Heusler electrodes on MgO (110) single substrates",

abstract = "Tunnel magnetoresistance effect has been investigated for magnetic tunnel junctions with Co 2FeAl 0.5Si 0.5 Heusler electrodes on a Cr-bufferd MgO (110) substrate. The grown Co 2FeAl 0.5Si 0.5 has L2 1 structure for annealing above 500°C. The TMR ratio of 73 at room temperature and 103 at 5 K were obtained for a junction consists of MgO(110) substrate/Cr/Co 2FeAl 0.5Si 0.5/Al-oxide/Co 75Fe 25/IrMn/Ta. The tunnel magnetoresistance ratio obtained in this study is almost the same as that estimated by using magnetic tunnel junction with the same kind of Co 2FeAl 0.5Si 0.5 electrode on a Cr-bufferd MgO (001) substrate. Smaller temperature dependence of magnetoresistance ratio was also found for the junctions on Cr-bufferd MgO(110) substrates.",

author = "N. Tezuka and F. Mitsuhashi and S. Sugimoto",

note = "Funding Information: This work was partly supported by Grant-in-Aid for Scientific Research (B) (22360002) and (S) (22226001), Asahi glass foundation, and Strategic Japanese-German Joint Research Program “ASPIMATT”.",

year = "2012",

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doi = "10.1063/1.3678586",

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AU - Tezuka, N.

AU - Mitsuhashi, F.

AU - Sugimoto, S.

N1 - Funding Information: This work was partly supported by Grant-in-Aid for Scientific Research (B) (22360002) and (S) (22226001), Asahi glass foundation, and Strategic Japanese-German Joint Research Program “ASPIMATT”.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - Tunnel magnetoresistance effect has been investigated for magnetic tunnel junctions with Co 2FeAl 0.5Si 0.5 Heusler electrodes on a Cr-bufferd MgO (110) substrate. The grown Co 2FeAl 0.5Si 0.5 has L2 1 structure for annealing above 500°C. The TMR ratio of 73 at room temperature and 103 at 5 K were obtained for a junction consists of MgO(110) substrate/Cr/Co 2FeAl 0.5Si 0.5/Al-oxide/Co 75Fe 25/IrMn/Ta. The tunnel magnetoresistance ratio obtained in this study is almost the same as that estimated by using magnetic tunnel junction with the same kind of Co 2FeAl 0.5Si 0.5 electrode on a Cr-bufferd MgO (001) substrate. Smaller temperature dependence of magnetoresistance ratio was also found for the junctions on Cr-bufferd MgO(110) substrates.

AB - Tunnel magnetoresistance effect has been investigated for magnetic tunnel junctions with Co 2FeAl 0.5Si 0.5 Heusler electrodes on a Cr-bufferd MgO (110) substrate. The grown Co 2FeAl 0.5Si 0.5 has L2 1 structure for annealing above 500°C. The TMR ratio of 73 at room temperature and 103 at 5 K were obtained for a junction consists of MgO(110) substrate/Cr/Co 2FeAl 0.5Si 0.5/Al-oxide/Co 75Fe 25/IrMn/Ta. The tunnel magnetoresistance ratio obtained in this study is almost the same as that estimated by using magnetic tunnel junction with the same kind of Co 2FeAl 0.5Si 0.5 electrode on a Cr-bufferd MgO (001) substrate. Smaller temperature dependence of magnetoresistance ratio was also found for the junctions on Cr-bufferd MgO(110) substrates.

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Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co ₂FeAl _0.5Si _0.5 Heusler electrodes on MgO (110) single substrates

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