Tunnel magnetoresistance effect using perpendicularly magnetized tetragonal and cubic Mn-Co-Ga Heusler alloy electrode

T. Kubota; S. Mizukami; Q. L. Ma; H. Naganuma; M. Oogane; Y. Ando; T. Miyazaki

doi:10.1063/1.4855016

Tunnel magnetoresistance effect using perpendicularly magnetized tetragonal and cubic Mn-Co-Ga Heusler alloy electrode

T. Kubota, S. Mizukami, Q. L. Ma, H. Naganuma, M. Oogane, Y. Ando, T. Miyazaki

Tohoku University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Epitaxially grown tetragonal and cubic Mn-Co-Ga thin films were fabricated onto single crystalline Cr (001) under a layer. High perpendicular magnetic anisotropy is achieved in the tetragonal Mn_2.3Co_0.4Ga _1.3 film, and a small, unexpected perpendicular magnetic anisotropy was induced in the cubic Mn_1.8Co_1.2Ga_1.0 film as well. The tunnel magnetoresistance (TMR) effect of the Mn-Co-Ga/MgO/CoFeB magnetic tunnel junctions (MTJs) were investigated. TMR ratios of 5% and 11% were observed at room temperature for the MTJs using tetragonal Mn _2.3Co_0.4Ga_1.3 and cubic Mn_1.8Co _1.2Ga_1.0 electrodes, respectively. The composition dependence is discussed briefly.

Original language	English
Article number	17C704
Journal	Journal of Applied Physics
Volume	115
Issue number	17
DOIs	https://doi.org/10.1063/1.4855016
Publication status	Published - 2014 May 7

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title = "Tunnel magnetoresistance effect using perpendicularly magnetized tetragonal and cubic Mn-Co-Ga Heusler alloy electrode",

abstract = "Epitaxially grown tetragonal and cubic Mn-Co-Ga thin films were fabricated onto single crystalline Cr (001) under a layer. High perpendicular magnetic anisotropy is achieved in the tetragonal Mn2.3Co0.4Ga 1.3 film, and a small, unexpected perpendicular magnetic anisotropy was induced in the cubic Mn1.8Co1.2Ga1.0 film as well. The tunnel magnetoresistance (TMR) effect of the Mn-Co-Ga/MgO/CoFeB magnetic tunnel junctions (MTJs) were investigated. TMR ratios of 5% and 11% were observed at room temperature for the MTJs using tetragonal Mn 2.3Co0.4Ga1.3 and cubic Mn1.8Co 1.2Ga1.0 electrodes, respectively. The composition dependence is discussed briefly.",

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T1 - Tunnel magnetoresistance effect using perpendicularly magnetized tetragonal and cubic Mn-Co-Ga Heusler alloy electrode

AU - Kubota, T.

AU - Mizukami, S.

AU - Ma, Q. L.

AU - Naganuma, H.

AU - Oogane, M.

AU - Ando, Y.

AU - Miyazaki, T.

PY - 2014/5/7

Y1 - 2014/5/7

N2 - Epitaxially grown tetragonal and cubic Mn-Co-Ga thin films were fabricated onto single crystalline Cr (001) under a layer. High perpendicular magnetic anisotropy is achieved in the tetragonal Mn2.3Co0.4Ga 1.3 film, and a small, unexpected perpendicular magnetic anisotropy was induced in the cubic Mn1.8Co1.2Ga1.0 film as well. The tunnel magnetoresistance (TMR) effect of the Mn-Co-Ga/MgO/CoFeB magnetic tunnel junctions (MTJs) were investigated. TMR ratios of 5% and 11% were observed at room temperature for the MTJs using tetragonal Mn 2.3Co0.4Ga1.3 and cubic Mn1.8Co 1.2Ga1.0 electrodes, respectively. The composition dependence is discussed briefly.

AB - Epitaxially grown tetragonal and cubic Mn-Co-Ga thin films were fabricated onto single crystalline Cr (001) under a layer. High perpendicular magnetic anisotropy is achieved in the tetragonal Mn2.3Co0.4Ga 1.3 film, and a small, unexpected perpendicular magnetic anisotropy was induced in the cubic Mn1.8Co1.2Ga1.0 film as well. The tunnel magnetoresistance (TMR) effect of the Mn-Co-Ga/MgO/CoFeB magnetic tunnel junctions (MTJs) were investigated. TMR ratios of 5% and 11% were observed at room temperature for the MTJs using tetragonal Mn 2.3Co0.4Ga1.3 and cubic Mn1.8Co 1.2Ga1.0 electrodes, respectively. The composition dependence is discussed briefly.

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Tunnel magnetoresistance effect using perpendicularly magnetized tetragonal and cubic Mn-Co-Ga Heusler alloy electrode

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