Tunnel magnetoresistance for junctions with epitaxial full-Heusler Co 2FeAl0.5Si0.5 electrodes with B2 and L2 1 structures

N. Tezuka; N. Ikeda; A. Miyazaki; S. Sugimoto; M. Kikuchi; K. Inomata

doi:10.1063/1.2354026

Tunnel magnetoresistance for junctions with epitaxial full-Heusler Co ₂FeAl_0.5Si_0.5 electrodes with B2 and L2 ₁ structures

N. Tezuka, N. Ikeda, A. Miyazaki, S. Sugimoto, M. Kikuchi, K. Inomata

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

156 Citations (Scopus)

Abstract

The tunnel magnetoresistance (TMR) effect has been investigated for magnetic tunnel junctions with epitaxial Co₂FeAl_0.5Si _0.5 Heusler electrodes with 52 and L2₁ structures on a Cr-bufferd MgO substrate. The epitaxially grown Co₂FeAl _0.5Si_0.5 has B2 structure when annealed below 400 °C, and has L2₁ structure for annealing above 450 °C. The TMR ratio of 76% at room temperature and 106% at 5 K were obtained for a MgO(001)/Cr/B2-type Co₂FeAl_0.5Si_0.5/Al oxide/ Co₇₅Fe₂₅/IrMn/Ta. The TMR ratio is larger than that of magnetic tunnel junction with an L2₁-type electrode, which may be due to the smoother surface of the B2 structure and disordered L2₁ structure due to the Cr atom interdiffusion.

Original language	English
Article number	112514
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2354026
Publication status	Published - 2006

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title = "Tunnel magnetoresistance for junctions with epitaxial full-Heusler Co 2FeAl0.5Si0.5 electrodes with B2 and L2 1 structures",

abstract = "The tunnel magnetoresistance (TMR) effect has been investigated for magnetic tunnel junctions with epitaxial Co2FeAl0.5Si 0.5 Heusler electrodes with 52 and L21 structures on a Cr-bufferd MgO substrate. The epitaxially grown Co2FeAl 0.5Si0.5 has B2 structure when annealed below 400 °C, and has L21 structure for annealing above 450 °C. The TMR ratio of 76% at room temperature and 106% at 5 K were obtained for a MgO(001)/Cr/B2-type Co2FeAl0.5Si0.5/Al oxide/ Co75Fe25/IrMn/Ta. The TMR ratio is larger than that of magnetic tunnel junction with an L21-type electrode, which may be due to the smoother surface of the B2 structure and disordered L21 structure due to the Cr atom interdiffusion.",

author = "N. Tezuka and N. Ikeda and A. Miyazaki and S. Sugimoto and M. Kikuchi and K. Inomata",

note = "Funding Information: This work was partly supported by the IT-Program RR2002 from MEXT and Industrial Technology Research Grant in {\textquoteleft} 0 * from New Energy and Industrial Technology Development Organization of Japan. ",

year = "2006",

doi = "10.1063/1.2354026",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Tunnel magnetoresistance for junctions with epitaxial full-Heusler Co 2FeAl0.5Si0.5 electrodes with B2 and L2 1 structures

AU - Tezuka, N.

AU - Ikeda, N.

AU - Miyazaki, A.

AU - Sugimoto, S.

AU - Kikuchi, M.

AU - Inomata, K.

N1 - Funding Information: This work was partly supported by the IT-Program RR2002 from MEXT and Industrial Technology Research Grant in ‘ 0 * from New Energy and Industrial Technology Development Organization of Japan.

PY - 2006

Y1 - 2006

N2 - The tunnel magnetoresistance (TMR) effect has been investigated for magnetic tunnel junctions with epitaxial Co2FeAl0.5Si 0.5 Heusler electrodes with 52 and L21 structures on a Cr-bufferd MgO substrate. The epitaxially grown Co2FeAl 0.5Si0.5 has B2 structure when annealed below 400 °C, and has L21 structure for annealing above 450 °C. The TMR ratio of 76% at room temperature and 106% at 5 K were obtained for a MgO(001)/Cr/B2-type Co2FeAl0.5Si0.5/Al oxide/ Co75Fe25/IrMn/Ta. The TMR ratio is larger than that of magnetic tunnel junction with an L21-type electrode, which may be due to the smoother surface of the B2 structure and disordered L21 structure due to the Cr atom interdiffusion.

AB - The tunnel magnetoresistance (TMR) effect has been investigated for magnetic tunnel junctions with epitaxial Co2FeAl0.5Si 0.5 Heusler electrodes with 52 and L21 structures on a Cr-bufferd MgO substrate. The epitaxially grown Co2FeAl 0.5Si0.5 has B2 structure when annealed below 400 °C, and has L21 structure for annealing above 450 °C. The TMR ratio of 76% at room temperature and 106% at 5 K were obtained for a MgO(001)/Cr/B2-type Co2FeAl0.5Si0.5/Al oxide/ Co75Fe25/IrMn/Ta. The TMR ratio is larger than that of magnetic tunnel junction with an L21-type electrode, which may be due to the smoother surface of the B2 structure and disordered L21 structure due to the Cr atom interdiffusion.

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DO - 10.1063/1.2354026

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112514

ER -

Tunnel magnetoresistance for junctions with epitaxial full-Heusler Co ₂FeAl_0.5Si_0.5 electrodes with B2 and L2 ₁ structures

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