Tunnel magnetoresistance for magnetic tunnel junctions with Co2 FeAl0.5 Si0.5 full Heusler electrodes fabricated by molecular beam epitaxy system

N. Tezuka; N. Ikeda; F. Mitsuhashi; S. Sugimoto

doi:10.1063/1.3072448

Tunnel magnetoresistance for magnetic tunnel junctions with Co2 FeAl0.5 Si0.5 full Heusler electrodes fabricated by molecular beam epitaxy system

N. Tezuka, N. Ikeda, F. Mitsuhashi, S. Sugimoto

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The authors fabricated Co2 FeAl0.5 Si0.5 full Heusler alloy thin films by using a molecular beam epitaxy system on Cr buffered MgO single crystal substrates and investigated their structural and magnetic properties. It was revealed that Co2 FeAl0.5 Si0.5 films formed ordered L 21 and B2 structures after annealing above 500 °C and below 400 °C, respectively. Then magnetic tunnel junctions with these electrodes and Al-oxide or MgO barriers were also fabricated, and the bias voltage dependence of tunnel magnetoresistance ratio was investigated. It was found that the tunnel magnetoresistance ratio of the junction with Al-oxide barrier has a larger asymmetric bias voltage dependence compared with that with MgO barrier, and the negative tunnel magnetoresistance ratio at high negative bias voltage is observed for both junctions.

Original language	English
Article number	07C925
Journal	Journal of Applied Physics
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.3072448
Publication status	Published - 2009

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title = "Tunnel magnetoresistance for magnetic tunnel junctions with Co2 FeAl0.5 Si0.5 full Heusler electrodes fabricated by molecular beam epitaxy system",

abstract = "The authors fabricated Co2 FeAl0.5 Si0.5 full Heusler alloy thin films by using a molecular beam epitaxy system on Cr buffered MgO single crystal substrates and investigated their structural and magnetic properties. It was revealed that Co2 FeAl0.5 Si0.5 films formed ordered L 21 and B2 structures after annealing above 500 °C and below 400 °C, respectively. Then magnetic tunnel junctions with these electrodes and Al-oxide or MgO barriers were also fabricated, and the bias voltage dependence of tunnel magnetoresistance ratio was investigated. It was found that the tunnel magnetoresistance ratio of the junction with Al-oxide barrier has a larger asymmetric bias voltage dependence compared with that with MgO barrier, and the negative tunnel magnetoresistance ratio at high negative bias voltage is observed for both junctions.",

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journal = "Journal of Applied Physics",

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T1 - Tunnel magnetoresistance for magnetic tunnel junctions with Co2 FeAl0.5 Si0.5 full Heusler electrodes fabricated by molecular beam epitaxy system

AU - Tezuka, N.

AU - Ikeda, N.

AU - Mitsuhashi, F.

AU - Sugimoto, S.

PY - 2009

Y1 - 2009

N2 - The authors fabricated Co2 FeAl0.5 Si0.5 full Heusler alloy thin films by using a molecular beam epitaxy system on Cr buffered MgO single crystal substrates and investigated their structural and magnetic properties. It was revealed that Co2 FeAl0.5 Si0.5 films formed ordered L 21 and B2 structures after annealing above 500 °C and below 400 °C, respectively. Then magnetic tunnel junctions with these electrodes and Al-oxide or MgO barriers were also fabricated, and the bias voltage dependence of tunnel magnetoresistance ratio was investigated. It was found that the tunnel magnetoresistance ratio of the junction with Al-oxide barrier has a larger asymmetric bias voltage dependence compared with that with MgO barrier, and the negative tunnel magnetoresistance ratio at high negative bias voltage is observed for both junctions.

AB - The authors fabricated Co2 FeAl0.5 Si0.5 full Heusler alloy thin films by using a molecular beam epitaxy system on Cr buffered MgO single crystal substrates and investigated their structural and magnetic properties. It was revealed that Co2 FeAl0.5 Si0.5 films formed ordered L 21 and B2 structures after annealing above 500 °C and below 400 °C, respectively. Then magnetic tunnel junctions with these electrodes and Al-oxide or MgO barriers were also fabricated, and the bias voltage dependence of tunnel magnetoresistance ratio was investigated. It was found that the tunnel magnetoresistance ratio of the junction with Al-oxide barrier has a larger asymmetric bias voltage dependence compared with that with MgO barrier, and the negative tunnel magnetoresistance ratio at high negative bias voltage is observed for both junctions.

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Tunnel magnetoresistance for magnetic tunnel junctions with Co2 FeAl0.5 Si0.5 full Heusler electrodes fabricated by molecular beam epitaxy system

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